Triple Dual Common Source Trench Field Stop IGBT® Power Module VC

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Triple Dual Common Source Trench Field Stop IGBT® Power Module VC

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APTGT100TDU60PG
Triple Dual Common Source Trench Field Stop IGBT® Power Module
VCES 600V 100A 80°C
Application Switches Switched Mode Power Supplies Uninterruptible Power Supplies
E5/E6
E1/E2
E3/E4
Features Trench Field Stop IGBT® Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current Avalanche energy rated RBSOA SCSOA rated Kelvin emitter easy drive Very stray inductance Symmetrical design Lead frames power connections High level integration Benefits Stable temperature behavior Very rugged Solderable terminals easy mounting Direct mounting heatsink (isolated package) junction case thermal resistance Easy paralleling positive VCEsat Very (12mm) profile Each easily paralleled achieve dual common source configuration three times current capability RoHS Compliant ratings 200A 550V Unit
June, 2006 APTGT100TDU60PG
E1/E2 E3/E4
E5/E6
Absolute maximum ratings
Symbol VCES RBSOA
Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation 25°C 80°C 25°C 25°C 150°C
Reverse Bias Safe Operating Area
These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed. application note APT0502 www.microsemi.com
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APTGT100TDU60PG
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions 600V 25°C =15V 100A 150°C 20V, Unit
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn Energy Turn Energy
Test Conditions 1MHz Inductive Switching (25°C) ±15V VBus 300V 100A Inductive Switching (150°C) ±15V VBus 300V 100A ±15V 25°C VBus 300V 150°C 100A 25°C 150°C
6100 0.875
Unit
Reverse diode ratings characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
Test Conditions VR=600V 100A 25°C 150°C 80°C 25°C 150°C 25°C 150°C 25°C 150°C 25°C 150°C
Unit
di/dt =2000A/µs
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APTGT100TDU60PG
June, 2006
100A 300V
APTGT100TDU60PG
Thermal package characteristics
Symbol Characteristic RthJC VISOL TSTG Torque Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 0.44 0.77 Unit °C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
heatsink
SP6-P Package outline (dimensions
places (3:1)
application note 1902 Mounting Instructions SP6-P (12mm) Power Modules www.microsemi.com
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APTGT100TDU60PG
June, 2006
APTGT100TDU60PG
Typical Performance Curve
Output Characteristics GE=15V) Output Characteristics
J=150°C 150°C =19V
TJ=25°C J=125°C
J=25°C
=13V =15V
GE=9V
Transfert Characteristics
=25°C
Energy losses Collector Current (mJ)
300V 150°C Eoff
TJ=125°C J=150°C =25°C
Switching Energy Losses Gate Resistance
300V =15V 100A 150°C
Reverse Bias Safe Operating Area
(mJ)
Eoff
GE=15V J=150°C RG=3.3
Gate Resistance (ohms)
Maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) Single Pulse 0.0001 0.001 0.01
IGBT
0.05 0.00001
Rectangular Pulse Duration Seconds
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APTGT100TDU60PG
June, 2006
APTGT100TDU60PG
Operating Frequency Collector Current Fmax, Operating Frequency (kHz)
Hard switching VCE=300V D=50% RG=3.3 =150°C
Forward Characteristic diode
J=125°C =150°C
Tc=85°C
TJ=25°C
Maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) Single Pulse 0.0001 0.001 0.01
Diode
0.05 0.00001
Rectangular Pulse Duration Seconds
Microsemi reserves right change, without notice, specifications information contained herein
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
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APTGT100TDU60PG
June, 2006

Triple Dual Common Source Trench Field Stop IGBT® Power Module VC

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