VCES 600V 100A* 80°C Application Welding converters Switched Mode

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VCES 600V 100A* 80°C Application Welding converters Switched Mode

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APTGT100H60T3G
VCES 600V 100A* 80°C
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Trench Field Stop IGBT® Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current Avalanche energy rated RBSOA SCSOA rated Kelvin emitter easy drive Very stray inductance Symmetrical design High level integration Internal thermistor temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals easy mounting Direct mounting heatsink (isolated package) junction case thermal resistance Easy paralleling positive VCEsat profile Each easily paralleled achieve phase twice current capability RoHS Compliant ratings 200A 550V Unit
June, 2006 APTGT100H60T3G
multiple inputs outputs must shorted together Example: 13/14 29/30 22/23
Absolute maximum ratings
Symbol VCES RBSOA
Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation 25°C 80°C 25°C 25°C 150°C
Reverse Bias Safe Operating Area
Specification IGBT device output current must limited exceed delta temperature greater than 30°C connectors.
These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed. application note APT0502 www.microsemi.com
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APTGT100H60T3G
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions 600V 25°C =15V 100A 150°C 20V, Unit
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn Energy Turn Energy
Test Conditions 1MHz Inductive Switching (25°C) ±15V VBus 300V 100A Inductive Switching (150°C) ±15V VBus 300V 100A ±15V 25°C VBus 300V 150°C 100A 25°C 150°C
6100 0.875
Unit
Reverse diode ratings characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
Test Conditions VR=600V 100A 25°C 150°C 80°C 25°C 150°C 25°C 150°C 25°C 150°C 25°C 150°C
Unit
di/dt =2000A/µs
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APTGT100H60T3G
June, 2006
100A 300V
APTGT100H60T3G
Temperature sensor (see application note APT0406 www.microsemi.com more information).
Symbol Characteristic Resistance 25°C 25/85 298.15 3952 Unit
Thermistor value
Thermistor temperature
Thermal package characteristics
Symbol Characteristic RthJC VISOL TSTG Torque Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
0.44 0.77
Unit °C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
heatsink
2500
Package outline (dimensions
application note 1901 Mounting Instructions Power Modules www.microsemi.com
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APTGT100H60T3G
June, 2006
APTGT100H60T3G
Typical Performance Curve
Output Characteristics GE=15V) Output Characteristics
J=150°C 150°C =19V
TJ=25°C J=125°C
J=25°C
=13V =15V
GE=9V
Transfert Characteristics
=25°C
Energy losses Collector Current (mJ)
300V 150°C Eoff
TJ=125°C J=150°C =25°C
Switching Energy Losses Gate Resistance
300V =15V 100A 150°C
Reverse Bias Safe Operating Area
(mJ)
Eoff
GE=15V J=150°C RG=3.3
Gate Resistance (ohms)
Maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) Single Pulse 0.0001 0.001 0.01
IGBT
0.05 0.00001
Rectangular Pulse Duration Seconds
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APTGT100H60T3G
June, 2006
APTGT100H60T3G
Operating Frequency Collector Current Fmax, Operating Frequency (kHz)
Hard switching VCE=300V D=50% RG=3.3 =150°C
Forward Characteristic diode
J=125°C =150°C
Tc=85°C
TJ=25°C
Maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) Single Pulse 0.0001 0.001 0.01
Diode
0.05 0.00001
Rectangular Pulse Duration Seconds
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
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APTGT100H60T3G
Microsemi reserves right change, without notice, specifications information contained herein
June, 2006

VCES 600V 100A* 80°C Application Welding converters Switched Mode

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