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VBUS VCES 1700V 100A 80°C Application Welding converters Swi


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APTGT100H170G
VBUS
VCES 1700V 100A 80°C
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Trench Field Stop IGBT® Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current Avalanche energy rated RBSOA SCSOA rated Kelvin emitter easy drive Very stray inductance Symmetrical design power connectors High level integration Benefits Stable temperature behavior Very rugged Direct mounting heatsink (isolated package) junction case thermal resistance Easy paralleling positive VCEsat profile RoHS Compliant
OUT1 OUT2
0/VBUS
OUT1 VBUS 0/VBUS
OUT2
Absolute maximum ratings
Symbol VCES RBSOA
Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation 25°C 80°C 25°C 25°C 125°C
Reverse Bias Safe Operating Area
200A 1600V
These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed. application note APT0502 www.microsemi.com
www.microsemi.com
APTGT100H170G
July, 2006
ratings 1700
Unit
APTGT100H170G
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current
Test Conditions 1700V 25°C 100A 125°C 20V,
Unit
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions 1MHz Inductive Switching (25°C) VBus 900V 100A Inductive Switching (125°C) VBus 900V 100A 125°C VBus 900V 100A 125°C
0.36
Unit
Diode ratings characteristics
Symbol Characteristic VRRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions 25°C 125°C 80°C 25°C 125°C 25°C 125°C 25°C 125°C 25°C 125°C
1700
Unit
Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1700V
100A
July, 2006 APTGT100H170G
100A 900V
di/dt =1600A/µs
www.microsemi.com
APTGT100H170G
Symbol Characteristic RthJC VISOL TSTG Torque
Thermal package characteristics
Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight heatsink terminals IGBT Diode
0.22 0.39
Unit °C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
3500
Package outline (dimensions
www.microsemi.com
APTGT100H170G
application note APT0601 Mounting Instructions Power Modules www.microsemi.com
July, 2006
APTGT100H170G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 125°C
=13V VGE=20V
J=25°C
TJ=125°C
=15V VGE=9V
Transfert Characteristics (mJ) Switching Energy Losses Gate Resistance 87.5 (mJ) 62.5 37.5 12.5 Gate Resistance (ohms)
Eoff
Energy losses Collector Current
900V 125°C
=25°C
TJ=125°C
Eoff
J=125°C
Reverse Bias Safe Operating Area
900V =15V 100A 125°C
1200 1600 2000
=15V =125°C RG=4.7
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration 0.25 Thermal Impedance (°C/W) 0.15 0.05 0.00001 0.05 0.0001 0.001 Single Pulse 0.01
IGBT
rectangular Pulse Duration (Seconds)
www.microsemi.com
APTGT100H170G
July, 2006
APTGT100H170G
Operating Frequency Collector Current Fmax, Operating Frequency (kHz)
=900V D=50% RG=4.7 J=125°C C=75°C
Forward Characteristic diode
J=125°C TJ=125°C J=25°C
hard switching
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) 0.35 0.25 0.15 0.05 0.05 0.0001 Single Pulse 0.001 0.01
Diode
0.00001
rectangular Pulse Duration (Seconds)
Microsemi reserves right change, without notice, specifications information contained herein
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
www.microsemi.com
APTGT100H170G
July, 2006

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