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VBUS VCES 1700V 100A 80°C Application Welding converters Swi
Top Searches for this datasheetAPTGT100H170G VBUS VCES 1700V 100A 80°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Trench Field Stop IGBT® Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current Avalanche energy rated RBSOA SCSOA rated Kelvin emitter easy drive Very stray inductance Symmetrical design power connectors High level integration Benefits Stable temperature behavior Very rugged Direct mounting heatsink (isolated package) junction case thermal resistance Easy paralleling positive VCEsat profile RoHS Compliant OUT1 OUT2 0/VBUS OUT1 VBUS 0/VBUS OUT2 Absolute maximum ratings Symbol VCES RBSOA Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation 25°C 80°C 25°C 25°C 125°C Reverse Bias Safe Operating Area 200A 1600V These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed. application note APT0502 www.microsemi.com www.microsemi.com APTGT100H170G July, 2006 ratings 1700 Unit APTGT100H170G ratings 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions 1700V 25°C 100A 125°C 20V, Unit Dynamic Characteristics Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions 1MHz Inductive Switching (25°C) VBus 900V 100A Inductive Switching (125°C) VBus 900V 100A 125°C VBus 900V 100A 125°C 0.36 Unit Diode ratings characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Test Conditions 25°C 125°C 80°C 25°C 125°C 25°C 125°C 25°C 125°C 25°C 125°C 1700 Unit Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1700V 100A July, 2006 APTGT100H170G 100A 900V di/dt =1600A/µs www.microsemi.com APTGT100H170G Symbol Characteristic RthJC VISOL TSTG Torque Thermal package characteristics Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight heatsink terminals IGBT Diode 0.22 0.39 Unit °C/W Isolation Voltage, terminal case min, isol<1mA, 50/60Hz 3500 Package outline (dimensions www.microsemi.com APTGT100H170G application note APT0601 Mounting Instructions Power Modules www.microsemi.com July, 2006 APTGT100H170G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 125°C =13V VGE=20V J=25°C TJ=125°C =15V VGE=9V Transfert Characteristics (mJ) Switching Energy Losses Gate Resistance 87.5 (mJ) 62.5 37.5 12.5 Gate Resistance (ohms) Eoff Energy losses Collector Current 900V 125°C =25°C TJ=125°C Eoff J=125°C Reverse Bias Safe Operating Area 900V =15V 100A 125°C 1200 1600 2000 =15V =125°C RG=4.7 maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration 0.25 Thermal Impedance (°C/W) 0.15 0.05 0.00001 0.05 0.0001 0.001 Single Pulse 0.01 IGBT rectangular Pulse Duration (Seconds) www.microsemi.com APTGT100H170G July, 2006 APTGT100H170G Operating Frequency Collector Current Fmax, Operating Frequency (kHz) =900V D=50% RG=4.7 J=125°C C=75°C Forward Characteristic diode J=125°C TJ=125°C J=25°C hard switching maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) 0.35 0.25 0.15 0.05 0.05 0.0001 Single Pulse 0.001 0.01 Diode 0.00001 rectangular Pulse Duration (Seconds) Microsemi reserves right change, without notice, specifications information contained herein Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved. www.microsemi.com APTGT100H170G July, 2006 Other recent searchesSi2325DS - Si2325DS Si2325DS Datasheet PNA4701M - PNA4701M PNA4701M Datasheet M63813P - M63813P M63813P Datasheet LBG105B3 - LBG105B3 LBG105B3 Datasheet HTQFP32 - HTQFP32 HTQFP32 Datasheet FBAS70DW-04 - FBAS70DW-04 FBAS70DW-04 Datasheet DS07-16505-2E - DS07-16505-2E DS07-16505-2E Datasheet DG200A - DG200A DG200A Datasheet
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