VCES 1700V 100A 80°C Application Switches Switched Mode Power Sup

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VCES 1700V 100A 80°C Application Switches Switched Mode Power Sup

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APTGT100DU170TG
VCES 1700V 100A 80°C
Application Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features Trench Field Stop IGBT® Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current Avalanche energy rated RBSOA SCSOA rated Kelvin emitter easy drive Very stray inductance Symmetrical design Lead frames power connections High level integration Internal thermistor temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals easy mounting Direct mounting heatsink (isolated package) junction case thermal resistance Easy paralleling positive VCEsat profile RoHS Compliant ratings 1700 200A 1600V Unit
July, 2006 APTGT100DU170TG
NTC1
NTC2
NTC2 NTC1
Absolute maximum ratings
Symbol VCES RBSOA
Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation 25°C 80°C 25°C 25°C 125°C
Reverse Bias Safe Operating Area
These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed. application note APT0502 www.microsemi.com
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APTGT100DU170TG
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions 1700V 25°C 100A 125°C 20V, Unit
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions 1MHz Inductive Switching (25°C) VBus 900V 100A Inductive Switching (125°C) VBus 900V 100A 125°C VBus 900V 100A 125°C
0.36
Unit
Chopper diode ratings characteristics
Symbol Characteristic VRRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions 25°C 125°C 80°C 25°C 125°C 25°C 125°C 25°C 125°C 25°C 125°C
1700
Unit
Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1700V
100A
July, 2006 APTGT100DU170TG
100A 900V
di/dt =1000A/µs
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APTGT100DU170TG
Temperature sensor (see application note APT0406 www.microsemi.com more information).
Symbol Characteristic Resistance 25°C 25/85 298.15 3952 Unit
Thermistor value
Thermistor temperature
Thermal package characteristics
Symbol Characteristic RthJC VISOL TSTG Torque Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
0.22 0.39
Unit °C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
Heatsink
3500
Package outline (dimensions
application note APT0501 Mounting Instructions Power Modules www.microsemi.com
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APTGT100DU170TG
DIMENSIO MARKED OLERENCED
July, 2006
APTGT100DU170TG
Typical Performance Curve
Output Characteristics GE=15V) Output Characteristics 125°C
=13V =20V
TJ=25°C
J=125°C
VGE=15V VGE=9V
Transfert Characteristics
TJ=25°C
Energy losses Collector Current
900V 125°C
(mJ)
J=125°C
TJ=125°C
Eoff
Switching Energy Losses Gate Resistance 87.5 (mJ) 62.5 37.5 12.5 Gate Resistance (ohms)
Eoff
Reverse Bias Safe Operating Area
900V =15V 100A 125°C
1200 1600 2000
VGE=15V J=125°C RG=4.7
0.25 Thermal Impedance (°C/W) 0.15 0.05 0.00001
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration
IGBT
0.05 0.0001 0.001
Single Pulse 0.01
rectangular Pulse Duration (Seconds)
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APTGT100DU170TG
July, 2006
APTGT100DU170TG
Operating Frequency Collector Current Fmax, Operating Frequency (kHz)
=900V D=50% RG=4.7 J=125°C C=75°C
Forward Characteristic diode
J=125°C J=125°C J=25°C
hard switching
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) 0.35 0.25 0.15 0.05 0.05 0.00001 Single Pulse 0.0001 0.001 0.01
Diode
rectangular Pulse Duration (Seconds)
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
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APTGT100DU170TG
Microsemi reserves right change, without notice, specifications information contained herein
July, 2006

VCES 1700V 100A 80°C Application Switches Switched Mode Power Sup

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