Asymmetrical Bridge Fast Trench Field Stop IGBT® Power Module VBU

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Asymmetrical Bridge Fast Trench Field Stop IGBT® Power Module VBU

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APTGT100DH120TG
Asymmetrical Bridge Fast Trench Field Stop IGBT® Power Module
VBUS VBUS SENSE
VCES 1200V 100A 80°C
Application Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features Fast Trench Field Stop IGBT® Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current Avalanche energy rated RBSOA SCSOA rated Kelvin emitter easy drive Very stray inductance Symmetrical design Lead frames power connections High level integration Internal thermistor temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals easy mounting Direct mounting heatsink (isolated package) junction case thermal resistance Easy paralleling positive VCEsat profile RoHS Compliant ratings 1200 200A 1100V Unit
July, 2006 APTGT100DH120TG
OUT1 OUT2
0/VBUS SENSE
0/VBUS
VBUS SENSE
OUT2
VBUS
0/VBUS
OUT1
0/VBUS SENSE
NTC2 NTC1
Absolute maximum ratings
Symbol VCES RBSOA
Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation 25°C 80°C 25°C 25°C 125°C
Reverse Bias Safe Operating Area
These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed. application note APT0502 www.microsemi.com
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APTGT100DH120TG
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions 1200V 25°C =15V 100A 125°C 20V, Unit
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn Energy Turn Energy
Test Conditions 1MHz Inductive Switching (25°C) ±15V VBus 600V 100A Inductive Switching (125°C) ±15V VBus 600V 100A ±15V 125°C VBus 600V 100A 125°C
7200
Unit
Diode ratings characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
Test Conditions VR=1200V 100A 25°C 125°C 80°C 25°C 125°C 25°C 100A 600V
di/dt =2500A/µs
1200
Unit
July, 2006 APTGT100DH120TG
125°C 25°C 125°C 25°C 125°C
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APTGT100DH120TG
Temperature sensor (see application note APT0406 www.microsemi.com more information).
Symbol Characteristic Resistance 25°C 25/85 298.15 3952 Unit
Thermistor value
Thermistor temperature
Thermal package characteristics
Symbol Characteristic RthJC VISOL TSTG Torque Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
0.26 0.34
Unit °C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
Heatsink
2500
Package outline (dimensions
application note APT0501 Mounting Instructions Power Modules www.microsemi.com
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APTGT100DH120TG
DIMENSIO MARKED OLERENCED
July, 2006
APTGT100DH120TG
Typical Performance Curve
Output Characteristics GE=15V) Output Characteristics 125°C
TJ=125°C
TJ=25°C
VGE=17V
=13V GE=15V
GE=9V
Transfert Characteristics (mJ) Switching Energy Losses Gate Resistance (mJ) Gate Resistance (ohms)
Energy losses Collector Current
600V 125°C Eoff
TJ=25°C J=125°C
J=125°C
Reverse Bias Safe Operating Area
600V =15V 100A 125°C
Eoff
1200 1500
VGE=15V TJ=125°C =3.9
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W)
IGBT
0.25 0.15 0.05 0.00001 0.0001 0.001 0.01 rectangular Pulse Duration (Seconds) 0.05 Single Pulse
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APTGT100DH120TG
July, 2006
APTGT100DH120TG
Operating Frequency Collector Current Fmax, Operating Frequency (kHz)
Hard switching VCE=600V D=50% =3.9 TJ=125°C Tc=75°C
Forward Characteristic diode
J=125°C TJ=125°C TJ=25°C
maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration 0.35 Thermal Impedance (°C/W) 0.25 0.15 0.05 0.05 0.0001 0.001 Single Pulse
Diode
0.00001
0.01
rectangular Pulse Duration (Seconds)
Microsemi reserves right change, without notice, specifications information contained herein
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
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APTGT100DH120TG
July, 2006

Asymmetrical Bridge Fast Trench Field Stop IGBT® Power Module VBU

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