100% Avalanche Rated Test Fast Switching Performance Simple Drive Requ

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100% Avalanche Rated Test Fast Switching Performance Simple Drive Requ

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AP10N70R/P-A
100% Avalanche Rated Test Fast Switching Performance Simple Drive Requirement RoHS Compliant
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
650V
Description
AP10N70 series specially designed main switching devices universal 90~265VAC off-line AC/DC converter applications.Both TO-220 TO-262 type provide high blocking voltage overcome voltage surge toughest power system with best combination fast switching,ruggedized design cost-effectiveness. TO-220 TO-262 package universally preferred commercialindustrial applications. device suited switch mode power supplies ,DC-AC converters high current high speed switching circuits.
TO-262(R)
TO-220(P)
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 1.39
Units
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.72 Unit
Data specifications subject change without notice
200519062-1/4
AP10N70R/P-A
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150
Test Conditions VGS=0V, ID=1.0mA VGS=10V, ID=5.0A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= ID=10A VDS=480V VGS=10V VDD=300V ID=10A RG=10,VGS=10V RD=30 VGS=0V VDS=15V f=1.0MHz f=1.0MHz
Min.
Typ. 35.9 11.5 14.9 19.7 51.7 23.3
Max. Units ±100
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
1950 3120
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions Tj=25, IS=10A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs
Min.
Typ. 7460
Max. Units
Notes:
Reverse Recovery Time
Reverse Recovery Charge
1.Pulse width limited safe operating area.
2.Starting Tj=25 VDD=50V L=1.0mH RG=25 IAS=10A.
3.Pulse width <300us duty cycle <2%.
AP10N70P/R-A
Drain Current
6.0V 5.0V
=150
6.0V 5.0V 4.5V
Drain Current
4.0V
4.5V
=4.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=10V Normalized BVDSS
Normalized RDS(ON)
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
VGS(th)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP10N70P/R-A
f=1.0MHz
10000
Gate Source Voltage
=10A
=320V =400V =480V (pF)
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100us
0.05
0.02
Single Pulse
10ms 100ms
0.01
Duty factor Peak Rthjc
Single Pulse
1000
0.01 0.00001 0.0001 0.001 0.01
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform

100% Avalanche Rated Test Fast Switching Performance Simple Drive Requ

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