1600 1901 2987 0.948 0.152 Phase Control Thyristor 5STP 20F1

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1600 1901 2987 0.948 0.152 Phase Control Thyristor 5STP 20F1

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1600 1901 2987 0.948 0.152
Phase Control Thyristor
5STP 20F1601
Doc. 5SYA1061-01 March
on-state switching losses Designed traction, energy industrial applications Optimum power handling capability
Blocking
Maximum rated values
Symbol VDRM, VRRM dV/dtcrit Parameter
Conditions Exp. 1070 125°C Symbol Conditions IDRM IRRM
5STP 20F1601 1600
5STP 20F1401 1400 1000 V/µs
5STP 20F1201 1200
Characteristic values
Unit
Forward leakage current Reverse leakage current
VDRM, 125°C VRRM, 125°C
Mechanical data
Maximum rated values
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions Device unclamped Device clamped
Unit Unit
Parameter Weight Surface creepage distance
Symbol Conditions
0.48
strike distance Maximum rated values indicate limits beyond which damage device occur
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
5STP 20F1601
On-state
Maximum rated values
Parameter Average on-state current on-state current Peak non-repetitive surge current Limiting load integral Peak non-repetitive surge current Limiting load integral
Characteristic values
Symbol Conditions IT(AV)M IT(RMS) ITSM ITSM Half sine wave,
1901 2987
Unit Unit
Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current
Symbol Conditions V(T0) 2000 2000 8000 Tvj=
1.25 0.948 0.152
Switching
Maximum rated values
Parameter Critical rate rise onstate current Critical rate rise onstate current
Symbol Conditions di/dtcrit di/dtcrit IT(AV), 1070 Cont. Cont.
1000
Unit A/µs A/µs
Circuit-commutated turn-off time
Characteristic values
125°C, ITRM 2000 diT/dt -12.5 A/µs, 0.67VDRM, dvD/dt 50V/µs
Parameter Recovery charge
Symbol Conditions 125°C, ITRM 2000 diT/dt -12.5 A/µs 0.4VRM,
2200
Unit
Gate turn-on delay time
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1061-01 March page
5STP 20F1601
Triggering
Maximum rated values
Parameter Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Mean forward gate power
Characteristic values
Symbol Conditions VFGM IFGM VRGM PG(AV) Symbol Conditions
Unit Unit
Parameter Gate-trigger voltage
0.25
Gate-trigger current
Thermal
Maximum rated values
Parameter Operating junction temperature range
Characteristic values
Symbol Conditions
Unit Unit K/kW K/kW K/kW K/kW K/kW
Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled 20.24 Anode-side cooled 20.24 Cathode-side cooled 20.24 Double-side cooled 20.24 Single-side cooled 20.24
Thermal resistance junction Rth(j-c) case Rth(j-c)A Rth(j-c)C Thermal resistance case Rth(c-h) heatsink Rth(c-h)
Analytical function transient thermal impedance:
Zth(j-c) e-t/
i(K/kW) i(s) 5.500 0.4653 7.240 0.1533 2.000 0.0375 1.340 0.0034 Fig. Transient thermal impedance junction-to case.
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1061-01 March page
5STP 20F1601
25°C
10000 9000 8000 7000 6000 5000 4000 3000 2000
125°C
1000
Fig. Max. on-state voltage characteristics
Fig. Surge forward current pulse length. Half sine wave, single pulse,
GAVm
500µs
IGTmin
+125
GTmin
10ms GAVm
IFGM
Fig. Gate trigger characteristics
Fig. Gate trigger characteristics
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1061-01 March page
(106 A2s)
ITSM
11000
5STP 20F1601
3500
120° 180°
3500
120° 180° 270°
3000
3000
2500
2500
2000
2000
1500
1500
1000
1000
1200 1600 2000 2400
1200 1600 2000 2400
Fig. Forward power loss average forward current, sine waveform,
Fig. Forward power loss average forward current, square waveform,
270°
1200
120° 180°
1600 2000 2400
60°90° 120° 180°
1200 1600 2000 2400
Fig. Max. case temperature vs.average forward current, sine waveform, 50Hz,
Fig. Max. case temperature vs.average forward current, square waveform, 50Hz,
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1061-01 March page
5STP 20F1601
WHITE
Fig. Device Outline Drawing.
Related application notes:
Doc. 5SYA2020 5SYA2034 5SYA 2036 Titel Design RC-Snubber Phase Control Applications Gate-drive Recommendations PCT's Recommendations regarding mechanical clamping Press Pack High Power Semiconductors
Please refer actual versions.
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Switzerland Semiconductors Fabrikstrasse CH-5600 Lenzburg, Switzerland Telephone Email Internet (0)58 1419 (0)58 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. 5SYA1061-01 March

1600 1901 2987 0.948 0.152 Phase Control Thyristor 5STP 20F1

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