Data Sheet January 2006 FN4780.4 Radiation Hardened 2.5V Referenc

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Data Sheet January 2006 FN4780.4 Radiation Hardened 2.5V Referenc

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IS-1009RH
Data Sheet January 2006 FN4780.4
Radiation Hardened 2.5V Reference
Star*Power Radiation Hardened IS-1009RH 2.5V shunt regulator diode designed provide stable 2.5V reference over wide current range. device designed maintain stability over full miitary temperature range over time. 0.2% reference tolerance achieved on-chip trimming. adjustment terminal provided allow calibration system errors. this terminal adjust reference voltage does effect temperature coefficient. Constructed with Intersil dielectrically isolated EBHF process, these devices immune Single Event Latch-up have been specifically designed provide highly reliable performance harsh radiation environments. Specifications Hard devices controlled Defense Supply Center Columbus (DSCC). numbers listed here must used when ordering. Detailed Electrical Specifications these devices contained 5962-00523.
Features
Electrically Screened 5962-00523 Qualified MIL-PRF-38535 Requirements Radiation Environment Total Dose krad(Si) (Max) Latch-up Immune Dielectrically Isolated Reverse Breakdown Voltage (VZ) 2.5V Change Current (400µA 10mA). Change Temp (-55°C 125°C) 15mV Reverse Breakdown Current 20mA Device tested with 10µF shunt capacitance connected from which provides optimum stability Interchangeable with 1009 Industry Types
Applications
Power Supply Monitoring Reference Systems Reference
Pinouts
IS2-1009RH (TO-206AB CAN) BOTTOM VIEW
Ordering Information
ORDERING NUMBER INTERNAL MKT. NUMBER PART MARKING F00523V TEMP. RANGE (°C)
5962F0052301VXC IS2-1009RH-Q 5962F0052301QXC IS2-1009RH-8
F00523 01QXC
5962F0052301VYC ISYE-1009RH-Q 5962F00 52301VYC 5962F0052301QYC ISYE-1009RH-8 5962F00 52301QYC
ISYE-1009RH (SMD.5) BOTTOM VIEW
IS2-1009RH/Proto
IS2-1009RH/ Proto
IS2-1009RH/ Proto ISLYE1009RH/Proto
ISYE-1009RH/Proto ISYE-1009RH/ Proto
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 1-888-468-3774 Intersil (and design) registered trademark Intersil Americas Inc. Copyright Intersil Americas Inc. 2000, 2006. Star*Poweris trademark Intersil Corporation. Rights Reserved other trademarks mentioned property their respective owners.
IS-1009RH Characteristics
DIMENSIONS 1270µm 1778µm mils mils) Thickness: 483µm ±25.4µm mils mil) INTERFACE MATERIALS Glassivation Type: Nitride (Si3N4) over Silox (SiO2) Nitride Thickness: Silox Thickness: Metallization Type: AlSiCu Thickness: Substrate EBHF, Dielectric Isolation Backside Finish Silicon ASSEMBLY RELATED INFORMATION Substrate Potential Unbiased (DI) ADDITIONAL INFORMATION Worst Case Current Density <1.0 A/cm2 Transistor Count
Metallization Mask Layout
IS-1009RH
Intersil U.S. products manufactured, assembled tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications viewed www.intersil.com/design/quality
Intersil products sold description only. Intersil Corporation reserves right make changes circuit design, software and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, www.intersil.com
FN4780.4 January 2006

Data Sheet January 2006 FN4780.4 Radiation Hardened 2.5V Referenc

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