P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) -30V 7

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) -30V 7

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GSC4409
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
-30V 7.5m -15A
GSC4409 uses advanced trench technology provide excellent on-resistance ultra gate charge. SOP-8 package universally preferred commercial-industrial surface mount applications suited load switch applications. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic
Description
Features
Package Dimensions
REF.
Millimeter Min. Max.
5.80 4.80 3.80 0.40 0.19 6.20 5.00 4.00 0.90 0.25
REF.
Millimeter Min. Max.
0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 1.27 TYP.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Symbol @TA=25 @TA=70 @TA=25 Tstg
Ratings -12.8 0.02 +150
Unit
Total Power Dissipation Linear Derating Factor
Operating Junction Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-ambient
Symbol Max. Rthj-amb
Value
Unit
GSC4409
Page:
Electrical Characteristics unless otherwise specified)
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 Drain-Source Leakage Current(Tj=55
Symbol BVDSS VGS(th) IGSS IDSS
Min. -1.4
Typ. 14.5 16.5 76.5 37.5 5270
Max. -2.7 ±100 6400
Unit
Test Conditions VGS=0, ID=-250uA VDS=VGS, ID=-250uA VDS=-5V, ID=-15A VGS= ±20V VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-15A VGS=-4.5V, ID=-10A ID=-15A VDS=-15V VGS=-10V VDS=-15V VGS=-10V RG=3 RL=1 VGS=0V VDS=-15V f=1.0MHz
Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) Td(on) Td(off) Ciss Coss Crss
Source-Drain Diode
Parameter Forward Voltage2
Continuous Source Current (Body Diode)
Symbol
Min.
Typ. 36.7
Max. -1.0
Unit
Test Conditions IS=-1.0A, VGS=0V VG=0V, VS=-1.0V IS=-15A, VGS=0V dI/dt=100A/
Reverse Recovery Time
Reverse Recovery Charge
Notes: Pulse width limited Max. junction temperature. Pulse width 300us, duty cycle Surface mounted copper board; when mounted Min. copper pad.
GSC4409
Page:
Characteristics Curve
Typical Output Characteristics
Transfer Characteristics
On-Resistance v.s. Drain Current Gate Voltage
0.01 0.001 0.0001 0.00001
On-Resistance v.s. Junction Temperature
On-Resistance v.s. Gate-Source Voltage
Body Diode Characteristics
GSC4409
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Maximum Safe Operating Area
Single Pulse Maximum Power Dissipation v.s. Junction Temperature
Gate Charge Characteristics
Typical Capacitance Characteristics
0.00001
0.0001
0.001
0.01
1000
Normalized Maximum Transient Thermal Impedance
Important Notice: rights reserved. Reproduction whole part prohibited without prior written approval GTM. Greserves right make changes products without notice. Gsemiconductor products warranted suitable life-support Applications, systems. Gassumes liability consequence customer product design, infringement patents, application assistance. Head Office Factory: Taiwan: 17-1 Tatung Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, 886-3-597-7061 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng Pu-Dung-Hsin District, Shang-Hai City, China 86-21-5895-7671 86-21-38950165
GSC4409
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P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) -30V 7

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