EPITAXIAL PLANAR TRANSISTOR GM5551 designed general purpose appli
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GM5551
EPITAXIAL PLANAR TRANSISTOR
GM5551 designed general purpose applications requiring high breakdown voltages.
Package Dimensions
REF.
Millimeter Min. Max. 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20
REF.
Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 TYP. 0.70 REF.
Absolute Maximum Ratings
Parameter Junction Temperature Storage Temperature Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Symbol Tstg VCBO VCES VEBO Ratings +150 +150 Unit
Characteristics
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3
Min. Typ. Max. Unit IC=100uA IC=1mA IE=10uA VCB=120V VEB=4V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IE=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, f=1MHz Test Conditions
Characteristics Curve
Important Notice: rights reserved. Reproduction whole part prohibited without prior written approval GTM. Greserves right make changes products without notice. Gsemiconductor products warranted suitable life-support Applications, systems. Gassumes liability consequence customer product design, infringement patents, application assistance. Head Office Factory: Taiwan: 17-1 Tatung Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, 886-3-597-7061 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng Pu-Dung-Hsin District, Shang-Hai City, China 86-21-5895-7671 86-21-38950165
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