EPITAXIAL PLANAR TRANSISTOR GM5401 designer general purpose appli
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GM5401
EPITAXIAL PLANAR TRANSISTOR
GM5401 designer general purpose applications requiring high breakdown voltages.
SOT-89
REF.
Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0.60 0.80 0.25 0.35
REF.
Millimeter Min. Max. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80
Absolute Maximum Ratings
Parameter Junction Temperature Storage Temperature Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Symbol Tstg VCBO VCEO VEBO Ratings +150 +150 -160 -150 -600 Unit
Characteristics
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3
Min. -160 -150 Typ. Max. -200 -500 Unit IC=-100uA, IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-120V IE=0 VEB=-5V IC=0 IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA VCE=-10V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz Test Conditions
Characteristics Curve
Important Notice: rights reserved. Reproduction whole part prohibited without prior written approval GTM. Greserves right make changes products without notice. Gsemiconductor products warranted suitable life-support Applications, systems. Gassumes liability consequence customer product design, infringement patents, application assistance. Head Office Factory: Taiwan: 17-1 Tatung Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, 886-3-597-7061 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng Pu-Dung-Hsin District, Shang-Hai City, China 86-21-5895-7671 86-21-38950165
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