N-CHANNEL ENHANCEMENT MODE POWER MOSFET SOT-89 package universall

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET SOT-89 package universall

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GM3055
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SOT-89 package universally preferred commercial industrial surface mount applications suited voltage applications such DC/DC converters.
Package Dimensions SOT-89
REF.
Millimeter Min. Max. 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20
REF.
Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 TYP. 0.70 REF.
Absolute Maximum Ratings
Parameter Operating Junction Temperature Range Storage Temperature Range Drain Source Voltage Gate Source Voltage Continuous Drain Current ,VGS@10V Continuous Drain Current ,VGS@10V Pulsed Drain Current
Symbol Tstg ID@TC=25 ID@TC=100 PD@TC=25
Ratings ~+150 +150
Unit
Total Power Dissipation
Thermal Data
Symbol Rthj-case Rthj-amb parameter Thermal Resistance junction-case Thermal Resistance junction-ambient Max. Max. Value Unit
Source -Drain Diode
Symbol Parameter Continuous source Current (Body Diode) Pulsed Source Current(Body Diode) Forward Voltage
Test Conditions VD=VG=0V, VS=1.3V Tj=25 ,Is=15A,V GS=0V
Min.
Typ.
Max.
Units
Notes:
Pulse width limited safe operating area. Pulse width 300us, duty cycle
Electrical Characteristics (unless otherwise specified)
Symbol BVDss Parameter Drain Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Reference VGS=10V,ID=8A VGS=4.5V,ID=6A VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Gate Threshold Voltage Drain-Source Leakage Current(Tj=25 VDS=VGS, ID=250uA VDS=30V,V GS=0V VDS=24V,V GS=0V VGS=±20V ID=8A VDS=24V VGS=5V VDS=15V ID=8A RG=3.4 GS=10V RD=1.9 VGS=0V VDS=25V f=1.0MHZ ID=1mA Min. Typ. 0.037 19.8 Max. ±100 Unit
BVDSS/ Breakdown Voltage Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance
Drain-Source Leakage Current(Tj=150 Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller)Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Characteristics Curve
Important Notice: rights reserved. Reproduction whole part prohibited without prior written approval GTM. Greserves right make changes products without notice. Gsemiconductor products warranted suitable life-support Applications, systems. Gassumes liability consequence customer product design, infringement patents, application assistance. Head Office Factory: Taiwan: 17-1 Tatung Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, 886-3-597-7061 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng Pu-Dung-Hsin District, Shang-Hai City, China 86-21-5895-7671 86-21-38950165

N-CHANNEL ENHANCEMENT MODE POWER MOSFET SOT-89 package universall

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