EPITAXIAL PLANAR TRANSISTOR GM2222A designed general purpose ampl
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GM2222A
EPITAXIAL PLANAR TRANSISTOR
GM2222A designed general purpose amplifier high speed, medium-power switching applications.
Package Dimensions
REF.
Millimeter Min. Max. 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20
REF.
Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 TYP. 0.70 REF.
Absolute Maximum Ratings
Parameter Junction Temperature Storage Temperature Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Symbol Tstg VCBO VCEO VEBO Ratings +150 +150 Unit
Characteristics
Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 hFE4 hFE5 hFE6
Min. Typ. Max. Unit IC=10uA IC=10mA IE=10uA VCB=60V VCB=60V,VEB(off)=3V VEB=3V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=100uA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=1V, IC=150mA VCE=20V, IC=20mA, f=100MHz Test Conditions
Characteristics Curve
Important Notice: rights reserved. Reproduction whole part prohibited without prior written approval GTM. Greserves right make changes products without notice. Gsemiconductor products warranted suitable life-support Applications, systems. Gassumes liability consequence customer product design, infringement patents, application assistance. Head Office Factory: Taiwan: 17-1 Tatung Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, 886-3-597-7061 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng Pu-Dung-Hsin District, Shang-Hai City, China 86-21-5895-7671 86-21-38950165
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