Power Field Effect Transistor Channel Enhancement Mode Lateral MO
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Document Number: MRF5P21045N Rev. 4/2007
Power Field Effect Transistor
Channel Enhancement Mode Lateral MOSFET
Designed CDMA base station applications with frequencies from 2110 2170 MHz. Suitable TDMA, CDMA multicarrier amplifier applications. Dual path topology suitable Doherty, quadrature, single ended push pull applications. Typical Carrier CDMA Performance: Volts, Pout Watts Avg., Full Frequency Band, Channel Bandwidth 3.84 MHz, 0.01% Probability CCDF. Power Gain 14.5 Drain Efficiency 25.5% Offset 3.84 Channel Bandwidth ACPR Offset 3.84 Channel Bandwidth Capable Handling VSWR, Vdc, 2140 MHz, Watts Output Power Features Characterized with Series Equivalent Large Signal Impedance Parameters Internally Matched Ease Qualified Maximum Operation Integrated Protection 200°C Capable Plastic Package RoHS Compliant Tape Reel. Suffix Units inch Reel.
MRF5P21045NR1
2110 2170 MHz, AVG., CDMA, DUAL PATH LATERAL CHANNEL POWER MOSFET
CASE 1486 STYLE
RFinA/VGSA
RFoutA/VDSA
RFinB/VGSB
RFoutB/VDSB
(Top View) Note: Exposed backside package source terminal transistors.
Figure Connections Table Maximum Ratings
Rating Drain Source Voltage Gate Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS Tstg Value 0.5, 0.5, +150 Unit
Table Thermal Characteristics
Characteristic Thermal Resistance, Junction Case Case Temperature 80°C, Case Temperature 77°C, Symbol Value (1,2) 1.35 1.48 Unit °C/W
MTTF calculator available http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators access MTTF calculators product. Refer AN1955, Thermal Measurement Methodology Power Amplifiers. http://www.freescale.com/rf. Select Documentation/Application Notes AN1955.
Freescale Semiconductor, Inc., 2007. rights reserved.
MRF5P21045NR1
Device Data Freescale Semiconductor
Table Protection Characteristics
Test Methodology Human Body Model (per JESD22 A114) Machine Model (per EIA/JESD22 A115) Charge Device Model (per JESD22 C101) Class (Minimum) (Minimum) (Minimum)
Table Moisture Sensitivity Level
Test Methodology JESD A113, IPC/JEDEC Rating Package Peak Temperature Unit
Table Electrical Characteristics 25°C unless otherwise noted)
Characteristic Characteristics
Symbol IDSS IDSS IGSS
Unit
Zero Gate Voltage Drain Leakage Current (VDS Vdc, Vdc) Zero Gate Voltage Drain Leakage Current (VDS Vdc, Vdc) Gate Source Leakage Current (VGS Vdc, Vdc) Characteristics Gate Threshold Voltage (VDS Vdc, Adc) Gate Quiescent Voltage (VDS Vdc, mAdc) Fixture Gate Quiescent Voltage (VDD Vdc, mAdc, Measured Functional Test) Drain Source Voltage (VGS Vdc, Adc) Dynamic Characteristics (1,3) Reverse Transfer Capacitance (VDS mV(rms)ac MHz, Vdc) Output Capacitance (VDS mV(rms)ac MHz, Vdc) Input Capacitance (VDS mV(rms)ac MHz, Vdc)
VGS(th) VGS(Q) VGG(Q) VDS(on)
0.35
Crss Coss Ciss
Functional Tests Freescale Test Fixture, system) Vdc, Pout Avg., 2112.5 MHz, 2122.5 2157.5 MHz, 2167.5 MHz, Carrier CDMA, 3.84 Channel Bandwidth Carriers. ACPR measured 3.84 Channel Bandwidth Offset. measured 3.84 Bandwidth Offset. 0.01% Probability CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss ACPR 13.5 23.5 14.5 25.5 16.5
Measurement made with device single ended configuration. (See Figure Possible Circuit Topologies) VGS(Q). Parameter measured Freescale Test Fixture, resistive divider network board. Refer Test Circuit schematic. Part internally matched both input output.
MRF5P21045NR1 Device Data Freescale Semiconductor
VBIAS VSUPPLY
INPUT
OUTPUT
0.250 0.080 Microstrip 1.012 0.080 Microstrip 0.165 0.080 Microstrip 0.378 0.080 Microstrip 0.365 1.000 Microstrip 0.115 1.000 Microstrip 0.510 0.080 Microstrip
Z14,
0.385 1.000 Microstrip 0.179 0.080 Microstrip 0.527 0.080 Microstrip 0.789 0.080 Microstrip 0.270 0.080 Microstrip Taconic TLX8 0300, 0.030, 2.55
Figure MRF5P21045NR1 Test Circuit Schematic Single Ended Configuration
Table MRF5P21045NR1 Test Circuit Component Designations Values Single Ended Configuration
Part C12, C14, Description Chip Capacitor Chip Capacitors Chip Capacitors Electrolytic Capacitor, Radial Chip Capacitors Chip Capacitor Chip Capacitor Chip Resistors Chip Resistor Part Number 18125C224KAT4A ATC100B6R8BT500XT C4532X5R1H685MT EMVY630ATR221MKE0S ATC100B1R0BT500XT ATC100B1R5BT500XT ATC100B0R5BT500XT CRCW12061001FKTA CRCW120610R0FKTA Manufacturer Nippon Chemi Vishay Vishay
MRF5P21045NR1 Device Data Freescale Semiconductor
AREA
MRF5P21045N Rev.
Figure MRF5P21045NR1 Test Circuit Component Layout Single Ended Configuration
Single -ended
Quadrature combined
Doherty
Push -pull
Figure Possible Circuit Topologies
MRF5P21045NR1 Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
DRAIN EFFICIENCY (dBc), ACPR (dBc) DRAIN EFFICIENCY (dBc), ACPR (dBc) IRL, INPUT RETURN LOSS (dB) Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 2135 MHz, 2145 -Tone Measurements IRL, INPUT RETURN LOSS (dB) 15.2 14.8 Gps, POWER GAIN (dB) 14.6 14.4 14.2 13.8 13.6 13.4 2060 ACPR 2080 2100 2120 2140 2160 2180 2200 2220 Vdc, Pout (Avg.) 2-Carrier W-CDMA Carrier Spacing, 3.84 Channel Bandwidth, 0.01% Probability (CCDF)
FREQUENCY (MHz)
Figure Carrier CDMA Broadband Performance Pout Watts Avg.
14.8 14.6 Gps, POWER GAIN (dB) 14.4 14.2 13.8 13.6 13.4 13.2 2060 ACPR 2080 2100 2120 2140 2160 FREQUENCY (MHz) 2180 2200 Vdc, Pout (Avg.) 2-Carrier W-CDMA Carrier Spacing, 3.84 Channel Bandwidth, 0.01% Probability (CCDF) 2220
Figure Carrier CDMA Broadband Performance Pout Watts Avg.
IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) Gps, POWER GAIN (dB) 2135 MHz, 2145 -Tone Measurements
Figure Tone Power Gain versus Output Power
Figure Third Order Intermodulation Distortion versus Output Power
MRF5P21045NR1 Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) Vdc, Pout (PEP), -Tone Measurements f2)/2 Center Frequency 2140 -TONE SPACING (MHz)
P6dB 47.74 (74.82 P3dB 48.38 (68.8
Ideal
Pout, OUTPUT POWER (dBm)
P1dB 47.78 (60.1 Actual
Vdc, Pulsed sec(on), Duty Cycle 2140
Pin, INPUT POWER (dBm)
Figure Intermodulation Distortion Products versus Tone Spacing
DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) ACPR Vdc, 2135 MHz, 2145 2-Carrier W-CDMA, Carrier Spacing, 3.84 Channel Bandwidth, 0.01% Probability (CCDF)
Figure Pulsed Output Power versus Input Power
-30_C 25_C 85_C 25_C -30_C 25_C -30_C -30_C 85_C 25_C (dBc), ACPR (dBc) DRAIN EFFICIENCY
Pout, OUTPUT POWER (WATTS)
Figure Carrier CDMA ACPR, IM3, Power Gain Drain Efficiency versus Output Power
Gps, POWER GAIN (dB) 2140 -30_C 85_C 25_C
-30_C 25_C 85_C
Pout, OUTPUT POWER (WATTS)
Figure Power Gain Drain Efficiency versus Output Power
MRF5P21045NR1 Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB) MTTF (HOURS)
2140
Pout, OUTPUT POWER (WATTS)
JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF hours when device operated Vdc, Pout Avg., 25.5%. MTTF calculator available http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators access MTTF calcu- lators product.
Figure Power Gain versus Output Power
Figure MTTF versus Junction Temperature
CDMA TEST SIGNAL
PROBABILITY (dB) 0.01 0.001 0.0001 PEAK -TO-AVERAGE (dB)
3.84 Channel
W-CDMA. ACPR Measured 3.84 Channel Bandwidth Offset. Measured 3.84 Bandwidth Offset. 0.01% Probability CCDF
-ACPR +ACPR 3.84 3.84 -IM3 3.84
+IM3 3.84
FREQUENCY (MHz)
Figure CCDF CDMA 3GPP, Test Model DPCH, Clipping, Single Carrier Test Signal
Figure 2-Carrier W-CDMA Spectrum
MRF5P21045NR1 Device Data Freescale Semiconductor
2220
2060 Zload 2060 Zsource 2220
Vdc, Pout Avg. 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zsource 8.01 j6.68 7.66 j6.94 7.26 j7.20 6.76 j7.45 6.28 j7.71 5.82 j7.78 5.37 j7.85 4.92 j7.85 4.46 j7.97 Zload 4.38 j4.62 4.27 j4.43 4.12 j4.04 3.98 j3.90 3.81 j3.69 3.73 j3.50 3.65 j3.30 3.57 j3.11 3.49 j2.92
Zsource Test circuit impedance measured from gate ground. Zload Test circuit impedance measured from drain ground. Output Matching Network
Input Matching Network
Device Under Test
source
load
Figure Series Equivalent Source Load Impedance Single Ended Configuration MRF5P21045NR1 Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
GATE LEAD
DRAIN LEAD
DATUM PLANE ZONE
NOTE
SEATING PLANE
NOTE
NOTES: CONTROLLING DIMENSION: INCH. INTERPRET DIMENSIONS TOLERANCES ASME Y14.5M-1994. DATUM PLANE LOCATED LEAD COINCIDENT WITH LEAD WHERE LEAD EXITS PLASTIC BODY PARTING LINE. DIMENSIONS "E1" INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION .006 SIDE. DIMENSIONS "E1" INCLUDE MOLD MISMATCH DETER- MINED DATUM PLANE -H-. DIMENSION "b1" DOES INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL .005 TOTAL EXCESS "b1" DIMENSION MAXIMUM MATERIAL CONDITION. DATUMS DETERMINED DATUM PLANE -H-. DIMENSION APPLIES WITHIN ZONE ONLY. HATCHING REPRESENTS EXPOSED AREA HEAT SLUG. INCHES .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 .551 .559 .353 .357 .132 .140 .124 .132 .270 .346 .350 .025 .164 .170 .007 .011 .106 .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 8.79 8.89 0.64 4.17 4.32 0.18 0.28 2.69 0.10
Device Data Freescale Semiconductor
BOTTOM VIEW
CASE 1486 ISSUE PLASTIC
STYLE
MRF5P21045NR1
PRODUCT DOCUMENTATION
Refer following documents your design process. Application Notes AN1907: Solder Reflow Attach Method High Power Devices Plastic Packages AN1955: Thermal Measurement Methodology Power Amplifiers AN3263: Bolt Down Mounting Method High Power Transistors RFICs Over Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances LDMOS Devices
REVISION HISTORY
following table summarizes revisions this document.
Revision Date April 2007 Initial Release Data Sheet Description
MRF5P21045NR1 Device Data Freescale Semiconductor
Reach
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MRF5P21045NR1
Document Number: Device Data MRF5P21045N Rev. 4/2007 Freescale Semiconductor
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