MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features Designed Hig
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MS2393
MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features
Designed High Power Pulse IFF, DME, TACAN Applications (typ.) 1030 1090 (min.) 1025 1150 (typ.) TACAN 1215 Gain Refractory Gold Metallization Ballasting Thermal Resistance Reliability Ruggedness 20:1 Load VSWR Specified Operating Conditions Input Output Matched Common Base Configuration
DESCRIPTION:
MS2393 gold metallized, silicon power transistor. MS2393 designed applications requiring high peak power duty cycles such IFF, TACAN. MS2393 packaged metal/ceramic package with internal input/output matching, resulting improved broadband performance thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol Parameter Value Unit
VCBO VCES VEBO PDISS
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
+200 +150
Thermal Data
RTH(j-c) Junction-Case Thermal Resistance 0.30
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MS2393
ELECTRICAL SPECIFICATIONS (Tcase STATIC
Symbol Test Conditions Value Min. Typ. Max. Units
BVCBO BVCES BVEBO
ICES
DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Units
POUT
Condition:
1025 1150 1025 1150
Pulse Width Duty Cycle
IMPEDANCE DATA
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MS2393
TYPICAL PERFORMANCE PERFORMANCE
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MS2393
TEST CIRCUIT
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MS2393
PACKAGE MECHANICAL DATA
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
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