MICROWAVE TRANSISTORS AVIONICS/JTIDS APPLICATIONS 960-1215 COMMON
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MS2213
MICROWAVE TRANSISTORS AVIONICS/JTIDS APPLICATIONS
960-1215 COMMON BASE GOLD METALLIZATION HERMETIC PACKAGE CLASS OPERATION POUT MIN. WITH GAIN
DESCRIPTION:
MS2213 silicon bipolar device specifically designed JTIDS pulsed power applications from 960-1215 MHz. Gold metallization emitter ballasting assure high reliability under Class amplifier operation. This device operates over wide range pulse widths, duty cycles temperatures, withstand 15:1 VSWR mismatch under load.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol
PDISS Device Current Power Dissipation Junction Temperature Pulsed Operation) Storage Temperature
Parameter
Collector-Supply Voltage
Value
+250 +200
Unit
Thermal Data
RTH(J-C) Junction-case Thermal Resistance
Advanced Power Technology reserves right change, without notice, specifications information contained herein
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MS2213
STATIC
ELECTRICAL SPECIFICATIONS (Tcase
Symbol
BVCBO BVEBO BVCER ICES 10mA 20mA VCB= RBE=10
Test Conditions
Value Min.
Typ.
Max.
-5.0
Unit
DYNAMIC
Symbol
POUT
Test Conditions
960-1215 960-1215 960-1215 VCC=35V PIN=5.0W PIN=5.0W PIN=5.0W
Value Min.
Typ.
Max.
Unit
Pulse format: off, repeat 3.3ms, then 4.5125 Duty Cycle: Burst 49.2%, overall 20.8%.
IMPEDANCE DATA
Freq. (MHz) 1090 1215 ZOUT 11.0 12.0 12.5
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MS2213
TYPICAL PERFORMANCE
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MS2213
TEST CIRCUIT
Advanced Power Technology reserves right change, without notice, specifications information contained herein
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MS2213
PACKAGE MECHANICAL DATA
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
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