MICROWAVE TRANSISTORS PULSED APPLICATIONS Features WATTS 10µSEC P
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MS2176
MICROWAVE TRANSISTORS PULSED APPLICATIONS Features
WATTS 10µSEC PULSE WIDTH, DUTY CYCLE WATTS 250µSEC PULSE WIDTH DUTY CYCLE MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING THERMAL RESISTANCE RELIABILITY RUGGEDNESS INFINITE VSWR CAPABILITY SPECIFIED OPERATING CONDITIONS
DESCRIPTION:
MS2176 gold metallized silicon pulse power transistor designed applications requiring high peak power duty cycles within frequency range MHz.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol Parameter Value Unit
VCBO VCES VEBO PDISS
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
21.6 +200 +150
Thermal Data
RTH(j-c) Junction-Case Thermal Resistance
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MS2176
ELECTRICAL SPECIFICATIONS (Tcase STATIC
Symbol Test Conditions Min. Value Typ. Max. Units
BVCBO BVCES BVCEO BVEBO
ICES
DYNAMIC
Symbol Test Conditions Min. Value Typ. Max. Units
POUT
33.5
Note: Pulse Width 250µSec, Duty Cycle
Advanced Power Technology reserves right change, without notice, specifications information contained herein
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MS2176
TYPICAL PERFORMANCE
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MS2176
TYPICAL PERFORMANCE CONTINUED) CONTINUED)
Advanced Power Technology reserves right change, without notice, specifications information contained herein
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MS2176
TYPICAL PERFORMANCE CONTINUED) CONTINUED)
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MS2176
PACKAGE MECHANICAL DATA
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