MICROWAVE TRANSISTORS APPLICATIONS Features VOLTS POUT WATTS MINI
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MS1226
MICROWAVE TRANSISTORS APPLICATIONS Features
VOLTS POUT WATTS MINIMUM COMMON EMITTER CONFIGURATION
MS1226 epitaxial silicon planar transistor designed primarily communications. This device utilizes emitter ballasting improved ruggedness reliability.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO VCEO VEBO PDISS TSTG llector-base Voltage llector-emitter Voltage Emit ter-Base Voltage Current Dissipation nction Temperature Storage Temperature
Paramete
+200 +150
Value
Thermal Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
053-7055 10-2002
MS1226
STATIC
ELECTRICAL SPECIFICATIONS (Tcase 25°C)
Symbol
BVcbo BVces BVceo BVebo Icbo
Test Conditions Min.
Value Typ.
Max.
-1.0
Unit
DYNAMIC DYNAMIC
Symbol
POUT Conditions
Test Conditions Min.
0.48W 0.48W 0.48W
Value Typ.
Max.
Unit
053-7055 10-2002
MS1226
PACKAGE MECHANICAL DATA
053-7055 10-2002
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