MICROWAVE TRANSISTORS APPLICATIONS VOLTS POUT WATTS MINIMUM COMMO

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MICROWAVE TRANSISTORS APPLICATIONS VOLTS POUT WATTS MINIMUM COMMO

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MS1008
MICROWAVE TRANSISTORS APPLICATIONS
VOLTS POUT WATTS MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
MS1008 epitaxial silicon planar transistor designed primarily communications. This device utilizes emitter ballasting achieve extreme ruggedness under severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol
VCBO VCEO VEBO PDISS
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Value
+200 +150
Unit
Thermal Data
RTH(J-C) Junction-Case Thermal Resistance 0.75 °C/W
11/2005
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MS1008
ELECTRICAL SPECIFICATIONS (Tcase 25°C)
STATIC
Symbol
BVCBO BVCES BVCEO BVEBO ICEO ICES hFE,, MS1008A 100mA 100mA 100mA 10mA
Test Conditions
1.4A 1.4A
Min.
Value Typ.
Max.
Unit
DYNAMIC
Symbol
POUT Conditions: POUT 150WPEP POUT 150WPEP POUT 150WPEP 30.000MHz
Test Conditions
30.001MHz 150mA 150mA 150mA 150mA
Min.
Value Typ.
Max.
Unit
WPEP
-220
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MS1008
TYPICAL PERFORMANCE
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MS1008
TYPICAL PERFORMANCE
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
MS1008
PACKAGE MECHANICAL DATA
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.

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