SILICON NOISE, HIGH-FREQUENCY TRANSISTOR MMBR911LT1G Denotes
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MMBR911LT1
SILICON NOISE, HIGH-FREQUENCY TRANSISTOR
MMBR911LT1G
Denotes RoHS Compliant, Free Terminal Finish
DESCRIPTION:
Designed noise, wide dynamic range front-end amplifiers low-noise VCO's. Available surface-mountable plastic package. This small-signal plastic transistor offers superior quality performance cost.
FEATURES:
High Gain-Bandwidth Product (Typ) Noise Figure (Typ) High Gain (Typ) mA/500 State-of-the-Art Technology Fine Line Geometry Ion-Implanted Arsenic Emitters Gold Metallization Wires Silicon Nitride Passivation Available tape reel packaging options: suffix 3,000 units reel
MAXIMUM RATINGS
Symbol VCEO VCBO VEBO PD(max) TSTG TJmax Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Power Dissipation Tcase 75°C Derate linearly above Tcase 75°C Storage Temperature Maximum Junction Temperature Value 4.44 +150 Unit mW/°C
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct. 9/2005
MMBR911LT1 MMBR911LT1G
THERMAL CHARACTERISTICS
Symbol Rating Thermal Resistance, Junction Case Value Unit °C/W
ELECTRICAL SPECIFICATIONS (TC=25°C unless otherwise noted)
CHARACTERISTICS
Symbol Characteristics Min. V(BR)CEO V(BR)CBO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage (IC=1.0 IB=0) Collector-Base Breakdown Voltage (IC=0.1 IE=0) Emitter-Base Breakdown Voltage (IE=0.1 IC=0) Collector Cutoff Current (VCB= Vdc, IE=0) Value Typ. Max. nAdc Unit
CHARACTERISTICS
Symbol Characteristics Min. Current Gain (IC=30 mAdc, VCE=10 Vdc) Value Typ. Max. Unit
DYNAMIC CHARACTERISTICS
Symbol Characteristics Min. Collector-Base Capacitance (VCB=10 Vdc, IE=0, f=1.0 MHz) Current Gain-Bandwidth Product (VCE=10 Vdc, IC=30 mAdc, f=1.0 GHz) Value Typ. Max. Unit
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct. 9/2005
MMBR911LT1 MMBR911LT1G
FUNCTIONAL TESTS
Symbol Test Conditions Min. Gain Noise Figure (IC=10 mAdc, VCE=10 Vdc) Noise Figure (IC=10 mAdc, VCE=10 Vdc) f=0.5 f=1.0 f=0.5 f=1.0 Value Typ. Max. Unit
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct. 9/2005
MMBR911LT1 MMBR911LT1G
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct. 9/2005
MMBR911LT1 MMBR911LT1G
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct. 9/2005
MMBR911LT1 MMBR911LT1G
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct. 9/2005
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