FDS6679 Volt P-Channel PowerTrench® MOSFET General Descripti

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FDS6679 Volt P-Channel PowerTrench® MOSFET General Descripti

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FDS6679
FDS6679
Volt P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET been designed specifically improve overall efficiency DC/DC converters using either synchronous conventional switching controllers, battery chargers. These MOSFETs feature faster switching lower gate charge than other MOSFETs with comparable RDS(ON) specifications. result MOSFET that easy safer drive (even very high frequencies), DC/DC power supply designs with higher overall efficiency.
Features
RDS(ON) RDS(ON) Extended VGSS range (±25V) battery applications High performance trench technology extremely RDS(ON) High power current handling capability
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
(Note
Units
+175
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
Package Marking Ordering Information
Device Marking FDS6679 Device FDS6679 Reel Size 13'' Tape width 12mm Quantity 2500 units
©2005 Fairchild Semiconductor Corporation
FDS6679
FDS6679
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSS
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note
Test Conditions
-250 -250 Referenced 25°C
Units
Characteristics
±100 mV/°C
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VGS, -250 -250 Referenced 25°C -4.5 VGS=-10 =-13 TJ=125°C
-1.6
mV/°C
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
3939
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
RGEN
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward -2.1 Voltage -2.1
(Note
-0.7
-1.2
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°C/W sec) 62.5°C/W steady state when mounted 1in2 copper
105°C/W when mounted copper
125°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
FDS6679
FDS6679
Typical Characteristics
-10V -6.0V -ID, DRAIN CURRENT -4.5V -3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.0V -3.5V
-3.5V -4.0V -4.5V -5.0V -6.0V -10V -3.0V
-2.5V -VDS, DRAIN SOURCE VOLTAGE
-ID, DIRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.04 RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -13A -10V
-7.0A 0.03 125oC 0.02 25oC 0.01
JUNCTION TEMPERATURE (oC)
-VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
-IS, REVERSE DRAIN CURRENT -5.0V -ID, DRAIN CURRENT
Figure On-Resistance Variation with Gate-to-Source Voltage.
125oC 0.01 0.001 0.0001 25oC -55oC
-125oC 25oC -55oC -VGS, GATE SOURCE VOLTAGE
-VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6679
FDS6679
Typical Characteristics
-VGS, GATE-SOURCE VOLTAGE -13A -10V
6000 5000 CAPACITANCE (pF)
-15V CISS
4000 3000 2000 1000
COSS CRSS
GATE CHARGE (nC)
-VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
100µs 10ms 100ms P(pk), PEAK TRANSIENT POWER RDS(ON) LIMIT
Figure Capacitance Characteristics.
-ID, DRAIN CURRENT
SINGLE PULSE 125°C/W 25°C
-10V SINGLE PULSE 125oC/W
0.01 0.01
-VDS, DRAIN-SOURCE VOLTAGE
0.001
0.01
TIME (sec)
1000
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
RJA(t) r(t)
0.05
P(pk)
0.02
0.01
0.01
SINGLE PULSE
RJA(t) Duty Cycle,
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6679

FDS6679 Volt P-Channel PowerTrench® MOSFET General Descripti

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