FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General

Datasheet Thumbnail

Top Searches for this datasheet

FDS6576 P-Channel 2.5V Specified PowerTrench
FDS6576
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET rugged gate version Fairchild Semiconductor's advanced PowerTrench process. been optimized power management applications with wide range gate drive voltage (2.5V 12V).
Features
RDS(ON) 0.014 RDS(ON) 0.020 -4.5 -2.5
Extended VGSS range 12V) battery applications. gate charge (43nC typical). Fast switching speed. High performance trench technology extremely RDS(ON).
Applications Load switch Battery protection Power management
High power current handling capability. RoHS Compliant.
MOSFET
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS
TA=25oC unless otherwise noted
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation Single Operation
(Note (Note (Note (Note
Ratings
+150
Units
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note (Note
Package Marking Ordering Information
Device Marking FDS6576 Device FDS6576 Reel Size 13'' Tape width 12mm Quantity 2500 units
2006 Fairchild Semiconductor Corporation
FDS6576
FDS6576 P-Channel 2.5V Specified PowerTrench
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSSF IGSSR
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note
Test Conditions
-250 -250 Referenced
Units
Characteristics
-100
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VGS, -250 -250 Referenced -4.5 -2.5 -8.8 -4.5 =125 -4.5 -4.5
-0.6
-0.83 11.5 11.1
-1.5
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
4044
MOSFET
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
-4.5 RGEN
-4.5
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward -2.1 Voltage -2.1
(Note
-0.66
-1.2
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins.
guaranteed design while
determined user's board design.
50°C/W when mounted 1in2 copper
105°C/W when mounted copper
125°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width Duty Cycle 2.0%
FDS6576
FDS6576 P-Channel 2.5V Specified PowerTrench
Typical Characteristics
6.0V DRAIN CURRENT 4.5V 3.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2.25 1.75 3.5V 1.25 0.75 DRAIN CURRENT 4.5V 6.0V 3.0V
2.5V
VDS, DRAIN-SOURCE VOLTAGE
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.03 RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
0.025
MOSFET
0.02 125oC 0.015
0.01 25oC 0.005 VGS, GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (oC)
Figure On-Resistance Variation with Temperature.
DRAIN CURRENT
Figure On-Resistance Variation with Gate-to-Source Voltage.
REVERSE DRAIN CURRENT
-55oC
25oC 125oC
125oC 0.01 0.001 0.0001 25oC -55oC
VGS, GATE SOURCE VOLTAGE
VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6576
FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET
Typical Characteristics
VGS, GATE-SOURCE VOLTAGE CAPACITANCE (pF)
3000 2500 CISS 2000 1500 1000 CRSS GATE CHARGE (nC) VDS, DRAIN SOURCE VOLTAGE COSS 1MHz
Figure Gate Charge Characteristics.
RDS(ON) LIMIT DRAIN CURRENT 10ms 100ms SINGLE PULSE 125oC/W 25oC 0.01 0.01 P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
SINGLE PULSE
0.001
0.01
VDS, DRAIN-SOURCE VOLTAGE
TIME (sec)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
0.05
JA(t) r(t) P(pk)
0.02 0.01
SINGLE PULSE
0.01
JA(t) Duty Cycle,
0.001 0.0001
0.001
0.01
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6576
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks. FACT Quiet board. Around world.The Power Franchise® Programmable Active FAST® QFET® QSQT OptoelectronicsQuiet SWITCHER® SMART SuperSOTTM-6 SuperSOTTM-8 TINYOPTOTruTranslationUHC® UniFETVCXWire
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. THESE SPECIFICATIONS EXPAND TERMS FAIRCHILD'S WORLDWIDE TERMS CONDITIONS, SPECIFICALLY WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION.
used herein: Life support devices systems devices systems which, intended surgical implant into body, support sustain life, whose failure perform when properly used accordance with instructions provided labeling, reasonably expected result significant injury user.
PRODUCT STATUS DEFINITIONS Definition Terms
critical component component life support device system whose failure perform reasonably expected cause failure life support device system, affect safety effectiveness.
Datasheet Identification Advance Information
Product Status Formative Design First Production
Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.
Preliminary
Identification Needed
Full Production
Obsolete
Production
FDS6576

FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General

Top Searches for this datasheet

Other recent searches