APT20M38BVFR APT20M38SVFR 0.038 APT20M38BVFRG* APT20M38
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APT20M38BVFR
APT20M38SVFR
0.038
APT20M38BVFRG* APT20M38SVFRG*
Denotes RoHS Compliant, Free Terminal Finish.
BVFR D3PAK
TO-247
POWER
FREDFET
Power generation high voltage N-Channel enhancement mode power MOSFETs. This technology minimizes JFET effect, increases packing density reduces on-resistance. Power also achieves faster switching speeds through optimized gate layout.
SVFR
Lower Leakage Faster Switching
Avalanche Energy Rated Fast Recovery Body Diode
TO-247 Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol VDSS VGSM TJ,TSTG Parameter Drain-Source Voltage Continuous Drain Current 25°C Pulsed Drain Current
Ratings: 25°C unless otherwise specified.
APT20M38B_SVFR(G) UNIT Volts Amps
2.96
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation 25°C Linear Derating Factor Operating Storage Junction Temperature Range Lead Temperature: 0.063" from Case Sec. Avalanche Current
Volts Watts W/°C Amps
(Repetitive Non-Repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic Test Conditions Drain-Source Breakdown Voltage (VGS 250µA) State Drain Current
UNIT Volts Amps
0.038 1000 ±100
(VDS ID(on) DS(on) Max, 10V)
Drain-Source On-State Resistance
(VGS 10V, ID[Cont.])
Ohms
3-2006 050-5602
Zero Gate Voltage Drain Current (VDS VDSS, Zero Gate Voltage Drain Current (VDS VDSS, 125°C) Gate-Source Leakage Current (VGS ±30V, Gate Threshold Voltage (VDS VGS, 1.0mA)
Website http://www.advancedpower.com
Volts
CAUTION: These Devices Sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed.
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss d(on) d(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
APT20M38B_SVFR(G)
Test Conditions VDSS [Cont.] 25°C VDSS [Cont.] 25°C UNIT
5100 1145
6120 1600
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS CHARACTERISTICS
Symbol
Characteristic Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
UNIT Amps Volts V/ns Amps
25°C 125°C 25°C 125°C 25°C 125°C
(Body Diode) (VGS [Cont.])
IRRM
Reverse Recovery Time [Cont.], di/dt 100A/µs) Reverse Recovery Charge [Cont.], di/dt 100A/µs) Peak Recovery Current [Cont.], di/dt 100A/µs)
THERMAL CHARACTERISTICS
Symbol Characteristic Junction Case Junction Ambient UNIT °C/W
0.34
Repetitive Rating: Pulse width limited maximum junction
temperature. Pulse Test: Pulse width Duty Cycle
MIL-STD-750 Method 3471 Starting +25°C, 0.58mH, Peak [Cont.], 100A/µs, VDSS, 150°C, 2.0,
200V.
Reserves right change, without notice, specifications information contained herein.
THERMAL IMPEDANCE (°C/W)
D=0.5 0.05 0.05
3-2006
0.01 0.005
0.02 0.01 SINGLE PULSE
Note:
Duty Factor t1/t2 Peak
050-5602
0.001 10-5
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE PULSE DURATION
10-4
DRAIN CURRENT (AMPERES)
VGS=10V
DRAIN CURRENT (AMPERES)
APT20M38B_SVFR(G)
VGS=15V
6.5V
6.5V
5.5V 4.5V VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE TYPICAL OUTPUT CHARACTERISTICS
5.5V 4.5V VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE RESISTANCE
DRAIN CURRENT (AMPERES)
-55°C +25°C +125°C
VDS> (ON) (ON)MAX. 250µSEC. PULSE TEST <0.5 DUTY CYCLE
NORMALIZED [Cont.]
VGS=10V
+125°C +25°C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE TYPICAL TRANSFER CHARACTERISTICS -55°C
VGS=20V
DRAIN CURRENT (AMPERES) FIGURE RDS(ON) DRAIN CURRENT
DRAIN CURRENT (AMPERES)
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
1.10
1.05
1.00
0.95
CASE TEMPERATURE (°C) FIGURE MAXIMUM DRAIN CURRENT CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
JUNCTION TEMPERATURE (°C) FIGURE BREAKDOWN VOLTAGE TEMPERATURE
0.90
[Cont.]
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
JUNCTION TEMPERATURE (°C) FIGURE ON-RESISTANCE TEMPERATURE
CASE TEMPERATURE (°C) FIGURE THRESHOLD VOLTAGE TEMPERATURE
050-5602
3-2006
APT20M38B_SVFR(G)
DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED (ON)
10µS 100µS
CAPACITANCE (pF)
15,000 10,000 Ciss 5,000 Coss Crss
=+25°C =+150°C SINGLE PULSE
1,000
10mS 100mS
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE MAXIMUM SAFE OPERATING AREA
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE TYPICAL CAPACITANCE DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
[Cont.]
VDS=40V VDS=100V
=+150°C
=+25°C
VDS=160V
TOTAL GATE CHARGE (nC) FIGURE GATE CHARGES GATE-TO-SOURCE VOLTAGE
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247 (BVFR) Package Outline
SAC: Tin, Silver, Copper
(SVFR) Package Outline
100%
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062)
15.95 (.628) 16.05(.632)
1.04 (.041) 1.15(.045)
13.41 (.528) 13.51(.532)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) Plcs}
4.50 (.177) Max. 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
3-2006
0.40 (.016) 0.79 (.031)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base Lead)
050-5602
Gate Drain Source
Heat Sink (Drain) Leads Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) 2-Plcs.
Dimensions Millimeters (Inches)
Source Drain Gate Dimensions Millimeters (Inches)
APT's products covered more U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
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