Fast-Diode 5SLX 12M3301 size: 13.6 13.6 Doc. 5SYA1661-0
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3300
Fast-Diode
5SLX 12M3301
size: 13.6 13.6
Doc. 5SYA1661-02 Feb.
Fast soft reverse-recovery losses High Passivation: SIPOS Nitride plus Polyimide
Maximum rated values
Parameter
Symbol VRRM IFRM
Conditions
3300
Unit
Repetitive peak reverse voltage Continuous forward current Repetitive peak forward current Junction temperature
Limited Tvjmax
Maximum rated values indicate limits beyond which damage device occur 60747
Diode characteristic values
Parameter Continuous forward voltage Continuous reverse current Peak reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy
Symbol Erec
Conditions 3300 1800 di/dt A/µs, 1200 Inductive load, Switch: 5SMX12M3300
2.35
Unit
Characteristic values according 60747
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
5SLX 12M3301
1800 di/dt A/µs 1200 Erec
25°C 125°C Erec [mJ], [µC],
Fig.
Typical diode forward characteristics
Fig.
Typical reverse recovery characteristics forward current
2100
1800 1200
Erec di/dt [A/µs] 1000 1200
1800 di/dt A/µs 1200
1400
-700
-100 -1400
-150 time [us] -2100
Fig.
Typical diode reverse recovery behaviour
Fig.
Typical reverse recovery di/dt
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1661-02 Feb. page
[µC],
Erec [mJ]
5SLX 12M3301
Mechanical properties
Parameter Overall Dimensions exposed front metal thickness Metallization
Unit 13.6 13.6 10.38 10.38 AlSi1
front back
assembly instructions refer IGBT Diode chips from Switzerland Ltd, Semiconductors, Doc. 5SYA 2033.
Outline Drawing
(Anode)
Note dimensions shown
This product been designed qualified Industrial Level.
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Switzerland Semiconductors Fabrikstrasse CH-5600 Lenzburg, Switzerland Telephone Email Internet (0)58 1419 (0)58 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. 5SYA1661-02 Feb.
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