Fast-Diode 5SLX 12M1711 size: 13.6 13.6 Doc. 5SYA1663-0
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1700
Fast-Diode
5SLX 12M1711
size: 13.6 13.6
Doc. 5SYA1663-01 Feb.
Fast soft reverse-recovery losses High Passivation: SIPOS Nitride plus Polyimide
Maximum rated values
Parameter
Symbol VRRM IFRM
Conditions
1700
Unit
Repetitive peak reverse voltage Continuous forward current Repetitive peak forward current Junction temperature
Limited Tvjmax
Maximum rated values indicate limits beyond which damage device occur 60747
Diode characteristic values
Parameter Continuous forward voltage Continuous reverse current Peak reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy
Symbol Erec
Conditions 1700 di/dt 1000 A/µs, Inductive load, Switch: 5SMX12M1701
1.65
Unit
Characteristic values according 60747
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
5SLX 12M1711
Erec [mJ]
di/dt 1000 A/µs
25°C 125°C
[µC], [µC],
Erec
Fig.
Typical diode forward characteristics
Fig.
Typical reverse recovery characteristics forward current
di/dt 1000 A/µs
-200
Erec [mJ]
-400
Erec
-100
-600
-200
-800
-300
-1000
-400 1200 time [ns] 1600 2000
-1200 2400
di/dt [A/µs] 1000
1200
Fig.
Typical diode reverse recovery behaviour
Fig.
Typical reverse recovery di/dt
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1663-01 Feb. page
5SLX 12M1711
Mechanical properties
Parameter Overall Dimensions exposed front metal thickness Metallization
Unit 13.6 13.6 11.6 11.6 AlSi1
front back
assembly instructions refer IGBT Diode chips from Switzerland Ltd, Semiconductors, Doc. 5SYA 2033.
Outline Drawing
(Anode)
Note dimensions shown
This product been designed qualified Industrial Level.
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Switzerland Semiconductors Fabrikstrasse CH-5600 Lenzburg, Switzerland Telephone Email Internet (0)58 1419 (0)58 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. 5SYA1663-01 Feb.
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