Fast-Diode 5SLX 12L2510 size: 12.4 12.4 Doc. 5SYA1664-0
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2500
Fast-Diode
5SLX 12L2510
size: 12.4 12.4
Doc. 5SYA1664-02 Feb.
Fast soft reverse-recovery losses High Passivation: SIPOS Nitride plus Polyimide
Maximum rated values
Parameter
Symbol VRRM IFRM
Conditions
2500
Unit
Repetitive peak reverse voltage Continuous forward current Repetitive peak forward current Junction temperature
Limited Tvjmax
Maximum rated values indicate limits beyond which damage device occur 60747
Diode characteristic values
Parameter Continuous forward voltage Continuous reverse current Peak reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy
Symbol Erec
Conditions 2500 1250 di/dt A/µs, 1200 Inductive load, Switch: 5SMX12L2510
1.75 1150
Unit
Characteristic values according 60747
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
5SLX 12L2510
Erec [mJ], [A], [µC]
Erec 1250 di/dt A/µs
Fig.
Typical forward characteristics
Fig.
Typical reverse recovery characteristics forward current
1250 di/dt A/µs
Erec [mJ], [µC],
-200
-400
-600 -800
Erec 1250
-100
-1000
-150
-1200
di/dt [A/µs]
-200 1000 2000 3000 4000 time [ns]
-1400 5000
Fig.
Typical reverse recovery behaviour
Fig.
Typical reverse recovery characteristics di/dt
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1664-02 Feb. page
5SLX 12L2510
Mechanical properties
Parameter Overall Dimensions exposed front metal thickness Metallization
Unit 12.4 12.4 10.38 10.38 AlSi1
front back
assembly instructions refer IGBT Diode chips from Switzerland Ltd, Semiconductors, Doc. 5SYA 2033.
Outline Drawing
(Anode)
Note dimensions shown
This product been designed qualified Industrial Level.
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Switzerland Semiconductors Fabrikstrasse CH-5600 Lenzburg, Switzerland Telephone Email Internet (0)58 1419 (0)58 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. 5SYA1664-02 Feb.
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