MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, TO-72, general

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MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, TO-72, general

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2N6304
MICROWAVE DISCRETE POWER TRANSISTORS
Silicon NPN, TO-72, general purpose Noise Transistor Noise Figure (typ) High (min) mAdc Maximum Available Gain (min)
Emitter Base Collector Case
TO-72
DESCRIPTION:
2N6304 silicon transistor designed primarily high gain, noise general-purpose amplifiers.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol VCEO VCBO VEBO Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit
Thermal Data
Total Device Dissipation Derate above 1.14 mWatts
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
2N6304
ELECTRICAL SPECIFICATIONS (Tcase 25°C)
STATIC (off)
Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Collector-Emitter Breakdown Voltage mAdc, Collector-Base Breakdown Voltage (IC= µAdc, IE=0) Emitter-Base Breakdown Voltage µAdc, Collector Cutoff Current (VCB Vdc, Vdc) Value Min. Typ. Max. Unit nAdc
(on)
Current Gain mAdc, Vdc)
DYNAMIC
Symbol Test Conditions Current-Gain Bandwidth Product mAdc, Vdc, MHz) Noise Figure Ohms) mAdc, Vdc, MHz) Collector-Base Capacitance (VCB 10Vdc, MHz) Value Min. Typ. Max. Unit
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
2N6304
FUNCTIONAL
Symbol Test Conditions Maximum Unilateral Gain Maximum Available Gain Insertion Gain mAdc, Vdc, mAdc, Vdc, mAdc, Vdc, Value Min. Typ. Max. Unit
|S21|
Table Common Emitter S-Parameters,
(MHz)
1000
|S11|
0.430 0.269 0.212 0.192 0.164 0.153 0.170 0.146 0.226 0.075
-119
|S21|
13.18 8.27 5.35 3.85 3.34 2.92 2.34 1.85 2.66 1.26
|S12|
0.013 0.019 0.024 0.032 0.036 0.042 0.042 0.052 0.065 0.062
|S22|
0.875 0.773 0.749 0.735 0.72 0.725 0.729 0.713 0.757 0.763
-104 -120 -136 -153
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
2N6304
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.

MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, TO-72, general

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