MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, TO-72 packaged
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2N5179
MICROWAVE DISCRETE POWER TRANSISTORS
Silicon NPN, TO-72 packaged VHF/UHF Transistor Noise, (max) High Current-Gain-Bandwidth Product (typ) mAdc Characterized with S-Parameters
Emitter Base Collector Case
TO-72
DESCRIPTION:
2N5179 Silicon transistor, designed equipment. ideal pre-driver, noise amplifier, oscillator applications.
ABSOLUTE MAXIMUM RATINGS (Tcase
Symbol
VCEO VCBO VEBO
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Value
Unit
Thermal Data
Total Device Dissipation Derate above 1.71
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
2N5179
ELECTRICAL SPECIFICATIONS (Tcase STATIC (off)
Symbol
BVCEO BVCBO BVEBO ICBO
Test Conditions
Collector-Emitter Sustaining Voltage mAdc, Collector-Base Breakdown Voltage (IC=1.0 Adc, IE=0) Emitter Base Breakdown Voltage 0.01 mAdc, Collector Cutoff Current (VCB Vdc,
Value
Min. Typ. Max.
Unit
(on)
VBE(sat) VCE(sat) Current Gain mAdc, Vdc) Base-Emitter Saturation Voltage mAdc, mAdc) Collector-Emitter Saturation Voltage mAdc, mAdc)
DYNAMIC
Symbol
Test Conditions
Current-Gain Bandwidth Product mAdc, Vdc, MHz) Collector-base Capacitance (VCB Vdc, MHz)
Value
Min. Typ. Max.
Unit
1500
FUNCTIONAL
Symbol
Test Conditions
Noise Figure (figure Common-Emitter Amplifier Power Gain (figure mAdc, Vdc, mAdc, Vdc,
Value
Min. Typ. Max.
Unit
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
2N5179
FUNCTIONAL (CONT)
Symbol
GUMAX |S21|
Test Conditions
Maximum Unilateral Gain Maximum Available Gain Insertion Gain mAdc, Vdc, mAdc, Vdc, mAdc, Vdc,
Value
Min. Typ. Max.
Unit
Note: Maximum Unilateral Gain |S21|2 |S11|2) |S22|2)
TEST CIRCUIT SCHEMATIC
External Shield Power
Power
-VEE
Cbypass:
0.02 3.0-35 2.0-10 1.0-5.0 0.001 1200
turn, 0.5" 0.5" Dia. turn, 0.5" 0.5" Dia. turn, 0.25" 0.5" Dia. Position from
Figure Amplifier Power Gain Noise Figure specifications.
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
2N5179
Table Common Emitter S-Parameters,
(MHz)
1000
|S11|
.471 .314 .230 .171 .168 .149 .137 .119 .153 .171
-145 -129 -174
|S21|
6.78 4.20 2.76 2.17 1.86 1.53 1.31 1.18 1.13 .979
|S12|
.023 .034 .043 .056 .062 .069 .073 .092 .101 .106
|S22|
.844 .780 .768 .756 .741 .740 .739 .744 .742 .749
-134 -177
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
2N5179
Advanced Power Technology reserves right change, without notice, specifications information contained herein
Visit website WWW.ADVANCEDPOWER.COM contact factory direct.
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