4000 5200 8200 0.086 Rectifier Diode 5SDD 54N4000 Doc.

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4000 5200 8200 0.086 Rectifier Diode 5SDD 54N4000 Doc.

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4000 5200 8200 0.086
Rectifier Diode
5SDD 54N4000
Doc. 5SYA1171-00 Dec.
Patented free-floating silicon technology Very on-state losses Optimum power handling capability
Blocking
Maximum rated values
Parameter Repetitive peak reverse voltage
Symbol Conditions VRRM 10ms, 0.150°C 10ms, 0.150°C
Value 3600 4000
Unit
repetitive peak reverse voltage VRSM
Characteristic values
Parameter Max. (reverse) leakage current
Symbol Conditions IRRM VRRM, 150°C
Unit
Mechanical data
Maximum rated values
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions Device unclamped Device clamped
Unit
Parameter Weight Housing thickness Surface creepage distance
Symbol Conditions
35.9
Unit
strike distance Maximum rated values indicate limits beyond which damage device occur
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
5SDD 54N4000
On-state
Maximum rated values
Parameter Max. average on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral
Symbol Conditions IF(AV)M Half sine wave,
5200 8200
Unit
Max. on-state current IF(RMS) IFSM IFSM 150°C, 150°C,
Characteristic values
Parameter On-state voltage Threshold voltage Slope resistance
Symbol Conditions V(T0) 5000 150°C 150°C 2500.7500
1.23 0.086
Unit
Switching
Characteristic values
Parameter
Symbol Conditions diF/dt A/µs,
18000
Unit
Recovery charge
IFRM 4000 150°C
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1171-00 Dec. page
5SDD 54N4000
Thermal
Maximum rated values
Parameter Operating junction temperature range
Characteristic values
Symbol Conditions
Unit Unit K/kW K/kW K/kW K/kW K/kW
Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled 81.108 Anode-side cooled 81.108 Cathode-side cooled 81.108 Double-side cooled 81.108 Single-side cooled 81.108
11.4 11.4
Thermal resistance junction Rth(j-c) case Rth(j-c)A Rth(j-c)C Thermal resistance case Rth(c-h) heatsink Rth(c-h)
Analytical function transient thermal impedance:
Zth(j-c) e-t/
i(K/kW) i(s) 3.728 0.8115 1.248 0.1014 0.433 0.0089 0.292 0.0015 Fig. Transient thermal impedance junction-tocase.
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1171-00 Dec. page
5SDD 54N4000
Max. on-state characteristic model: VF25
Max. on-state characteristic model: VF150 A150
ATvj BTvj CTvj ln(I DTvj
Valid 110000
ATvj BTvj CTvj ln(I DTvj
Valid 110000 B150
C150
D150
Fig. Isothermal on-state characteristics
Fig. Isothermal on-state characteristics
Fig. On-state power losses average on-state current.
Fig. Max. permissible case temperature average on-state current.
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1171-00 Dec. page
5SDD 54N4000
Fig. Surge on-state current pulse length. Halfsine wave.
Fig. Surge on-state current number pulses. Half-sine wave, 50Hz.
Fig. Recovery charge decay rate on-state current.
Fig. Peak reverse recovery current decay rate on-state current.
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1171-00 Dec. page
5SDD 54N4000
Fig. Outline drawing. dimensions millimeters represent nominal values unless stated otherwise.
Related application notes:
Doc. 5SYA 2020 5SYA 2029 5SYA 2036 Titel Design RC-Snubbers Phase Control Applications Designing Large Rectifiers with High Power Diodes Recommendations regarding mechanical clamping Press Pack High Power Semiconductors
Please refer actual versions.
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Switzerland Semiconductors Fabrikstrasse CH-5600 Lenzburg, Switzerland Telephone Email Internet (0)58 1419 (0)58 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. 5SYA1171-00 Dec.

4000 5200 8200 0.086 Rectifier Diode 5SDD 54N4000 Doc.

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