N-channel 1200V 500mA TO-220 Zener protected SuperMESHPower MOSFET

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N-channel 1200V 500mA TO-220 Zener protected SuperMESHPower MOSFET

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STP1N120
N-channel 1200V 500mA TO-220 Zener protected SuperMESHPower MOSFET
Type STP1N120
VDSS 1200V
RDS(on)
500mA
100% avalanche tested Extremely high dv/dt capability improved capability high voltage benchmark Gate charge minimized
TO-220
Description
SuperMESHseries obtained through extreme optimization ST's well established strip-based PowerMESHlayout. addition pushing on-resistance significantly down, special care taken ensure very good dv/dt capability most demanding applications. Such series complements full range high voltage Power MOSFETs including revolutionary MDmeshproducts.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STP1N120 Marking P1N120 Package TO-220 Packaging Tube
September 2006
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www.st.com
This preliminary information product development undergoing evaluation. Details subject change without notice.
Contents
STP1N120
Contents
Electrical ratings Electrical characteristics Test circuit
Package mechanical data Revision history
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STP1N120
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings
Parameter Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) 25°C Drain current (continuous) 100°C Drain current (pulsed) Derating factor Value 1200 0.36 Unit W/°C V/ns
PTOT dv/dt Tstg
Total dissipation 25°C Peak diode recovery voltage slope Operating junction temperature Storage temperature
Pulse width limited safe operating area di/dt 200A/µs,
Table
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case Value 2.78 62.5 Unit °C/W °C/W
Rthj-amb Thermal resistance junction-amb Maximum lead temperature soldering purpose
When mounted FR-4 board,
Table
Symbol
Avalanche characteristics
Parameter Avalanche current, repetitive notrepetitive (pulse width limited max) Single pulse avalanche energy (starting Tj=25°C, ID=IAS, VDD= 50V) value Unit
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Electrical characteristics
STP1N120
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS Gate body leakage current (VDS Gate threshold voltage Static drain-source resistance Test conditions 1mA, VGS= rating, rating,Tc=125°C ±20V VDS= VGS, 50µA VGS= 10V, 0.25A 3.75 Min. 1200 Typ. Max. Unit
Table
Symbol Ciss Coss Crss
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. Max. Unit
=25V, f=1MHz, VGS=0
VDD=960V, 500mA =10V (see Figure
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STP1N120
Electrical characteristics
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Max. Unit
Table
Symbol ISDM VSD(1) IRRM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=1A, VGS=0 ISD=1A, VDD=100V di/dt 50A/µs,Tj=25°C (see Figure ISD=1A,VDD=100V di/dt=50A/µs,Tj=150°C (see Figure Test conditions Typ. Unit
Pulsed: pulse duration 300µs, duty cycle 1.5%
Table
Symbol
Gate-source zener diode
Parameter Test conditions Typ. Unit
BVGSO Gate-source breakdown voltage 1mA, (open drain)
built-in-back zener diodes have specifically been designed enhance only device's capability, also make them safely absorb possibile voltage transients that occasionally applied from gate source. this respect zener voltage appropriate achieve efficient osteffective intervention protect device's integrity. These integrated zener diodes thus avoid usage external components.
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Test circuit
STP1N120
Figure
Test circuit
Switching times test circuit resistive load Figure Gate charge test circuit
Figure
Test circuit inductive load Figure switching diode recovery times
Unclamped inductive load test circuit
Figure
Unclamped inductive waveform
Figure
Switching time waveform
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STP1N120
Package mechanical data
Package mechanical data
order meet environmental requirements, offers these devices ECOPACK® packages. These packages have Lead-free second level interconnect category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com
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Package mechanical data
STP1N120
TO-220 MECHANICAL DATA
DIM. MIN. 4.40 0.61 1.15 0.49 15.25 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
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STP1N120
Revision history
Revision history
Table
Date 14-Sep-2006
Revision history
Revision First release Changes
9/10
STP1N120
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N-channel 1200V 500mA TO-220 Zener protected SuperMESHPower MOSFET

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