STB200NF04L STB200NF04L-1 N-CHANNEL STripFETII MOSFET Table
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STP200NF04L
STB200NF04L STB200NF04L-1
N-CHANNEL STripFETII MOSFET
Table General Features
TYPE STB200NF04L STP200NF04L STB200NF04L-1
Figure Package
RDS(on)
VDSS
TYPICAL RDS(on) 100% AVALANCHE TESTED THERESHOLD DRIVE
TO-220
DESCRIPTION This MOSFET latest development STMicroelectronics unique "Single Feature SizeTM" stripbased process. resulting transistor shows extremely high packing density on-resistance, rugged avalanche characteristics lesscritical alignement steps therefore remarkable manufacturing reproducibility. This improved device been specifically designed Automotive applications. APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED
Figure Internal Schematic Diagram
Table Order Codes
PART NUMBER STP200NF04L STB200NF04L STB200NF04L-1 MARKING P200NF04L B200NF04L B200NF04L PACKAGE TO-220 PACKAGING TUBE TAPE REEL TUBE
Rev. April 2005 1/12
STP200NF04L STB200NF04L STB200NF04L-1
Table Absolute Maximum ratings
Symbol VGDR (**) PTOT
dv/dt
Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS=20 Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
Value
Unit W/°C V/ns
Tstg
(1)ISD di/dt A/µs, TJMAX Pulse width limited safe operating area. Starting 25°C, 50A, (**) Current limited Package
Table Thermal Data
Rthj-case Rthj-pcb Rthja Thermal Resistance Junction-case Thermal Resistance Junction-pcb Thermal Resistance Junction-ambient 62.5 0.50 Unit °C/W °C/W
Maximum Lead Temperature Soldering Purpose
(*)When mounted
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table On/Off
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Test Conditions Min. ±100 TO-220 Typ. Max. Unit
VDS= Rating Zero Gate Voltage Drain Current (VGS Rating, Gate-body Leakage Current (VDS Static Drain-source Resistance
Gate Threshold Voltage VGS, 250µA
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STP200NF04L STB200NF04L STB200NF04L-1
ELECTRICAL CHARACTERISTICS (CONTINUED) Table Dynamic
Symbol Ciss Coss Crss td(on) td(off) tf(Voff) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-off Delay Time Fall Time Cross-over Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 25V, MHz, Min. Typ. 6400 1300 28.5 Max. Unit
(see Figure Vclamp (see Figure (see Figure
Table Source Drain Diode
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs, 150°C (see Figure Test Conditions Min. Typ. Max. Unit
Pulse width limited safe operating area (4). Pulsed: Pulse duration duty cycle
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STP200NF04L STB200NF04L STB200NF04L-1
Figure Safe Operating Area Figure Thermal Impedance
Figure Output Characteristics
Figure Transfer Characteristics
Figure Transconductance
Figure Static Drain-source Resistance
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STP200NF04L STB200NF04L STB200NF04L-1
Figure Gate Charge Gate-source Voltage Figure Capacitance Variations
Figure Normalized Gate Thereshold Voltage Temperature
Figure Normalized Resistance Temperature
Figure Source-Drain Diode Forward Characteristics
Figure Normalized Breakdown Voltage Temperature
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STP200NF04L STB200NF04L STB200NF04L-1
Figure Unclamped Inductive Load Test Circuit Figure Unclamped Inductive Wafeform
Figure Switching Times Test Circuit Resistive Load
Figure Gate Charge Test Circuit
Figure Test Circuit Inductive Load Switching Diode Recovery Times
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STP200NF04L STB200NF04L STB200NF04L-1
TO-220 MECHANICAL DATA
DIM. MIN. 4.40 0.61 1.15 0.49 15.25 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
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STP200NF04L STB200NF04L STB200NF04L-1
TO-262 (I2PAK) MECHANICAL DATA
DIM. MIN. 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 3.50 1.27 MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch
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STP200NF04L STB200NF04L STB200NF04L-1
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
DIM. MIN. 4.88 1.27 5.28 15.85 1.75 0.192 0.590 0.050 0.055 0.094 0.015 2.49 0.03 1.14 0.45 1.23 8.95 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 MAX. 2.69 0.23 0.93 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
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STP200NF04L STB200NF04L STB200NF04L-1
D2PAK FOOTPRINT
TAPE REEL SHIPMENT
REEL MECHANICAL DATA
DIM. 12.8 20.2 24.4 30.4 26.4 13.2 MIN. MAX. 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. MIN. 10.5 15.7 1.59 1.65 11.4 11.9 0.25 23.7 24.3 MAX. 10.7 15.9 1.61 1.85 11.6 12.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE 1000
sales type
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STP200NF04L STB200NF04L STB200NF04L-1
Table Revision History
Date 11/Apr/2005 Revision First Release. Description Changes
11/12
STP200NF04L STB200NF04L STB200NF04L-1
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics other names property their respective owners 2005 STMicroelectronics Rights Reserved STMicroelectronics group companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States America
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