INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE F
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97188
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
(ON) Trench IGBT Technology switching losses Maximum Junction temperature short circuit Square RBSOA 100% parts tested rated current (ILM) Positive (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package
IRGB4056DPbF
VCES 600V 12A, 100°
5µs, TJ(max) 175°
n-channel
VCE(on) typ. 1.55V
Benefits
High Efficiency wide range applications Suitable wide range switching frequencies (ON) Switching losses Rugged transient Performance increased reliability Excellent Current sharing parallel operation
Gate
TO-220AB
Collector
Max.
+175
Emitter
Units
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 25°C 100°C 25°C 100°C TSTG
Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load Current
Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting Torque, 6-32 Screw
Continuous Gate-to-Emitter Voltage
(0.063 (1.6mm) from case) (1.1
Thermal Resistance
Parameter
(IGBT) (Diode)
Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
Typ.
0.50
Max.
1.07 3.66
Units
°C/W
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02/24/06
IRGB4056DPbF
Electrical Characteristics 25°C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ
Min.
Typ.
0.30 1.55 1.90 1.97 2.10 1.61
Max. Units
1.85 3.10 ±100
Conditions
100µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. Breakdown Voltage
Ref.Fig 5,6,7 9,10,11
V/°C (25°C-175°C) 12A, 15V, 25°C 12A, 15V, 150°C 12A, 15V, 175°C VGE, 350µA
VCE(on) VGE(th)
VGE(th)/TJ
Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
ICES IGES
mV/°C VGE, 1.0mA (25°C 175°C) 50V, 12A, 80µs 600V 600V, 175°C 12A, 175°C ±20V
Switching Characteristics 25°C (unless otherwise specified)
Parameter
Eoff Etotal td(on) td(off) Eoff Etotal td(on) td(off) Cies Coes Cres RBSOA SCSOA Erec Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Reverse Recovery Energy Diode Diode Reverse Recovery Time Peak Reverse Recovery Current
Min.
Typ.
Max. Units
400V
Conditions
Ref.Fig
12A, 400V, 200µH, 150nH, 25°Energy losses include tail diode reverse recovery
12A, 400V, 200µH, 150nH,
12A, 400V, VGE=15V RG=22, L=100µH, LS=150nH, 175°C 12A, 400V, 200µH, 150nH 175°
WF1,
Energy losses include tail diode reverse recovery
1.0Mhz 175°C, 480V, =600V +15V
FULL SQUARE
400V, =600V +15V 175°C 400V, 15V, =200µH, 150nH
Notes: (VCES), 20V, 100µH, This only applied TO-220AB package. Pulse width limited max. junction temperature. Refer AN-1086 guidelines measuring V(BR)CES safely.
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IRGB4056DPbF
Ptot
(°C)
(°C)
Fig. Maximum Collector Current Case Temperature
Fig. Power Dissipation Case Temperature
10µsec
100µsec 25°C 175°C Single Pulse 1000 10000 1msec
1000
Fig. Forward 25°C, 175°C; =15V
8.0V
Fig. Reverse Bias 175°C; =15V
8.0V
Fig. Typ. IGBT Output Characteristics -40°C; 80µs
Fig. Typ. IGBT Output Characteristics 25°C; 80µs
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IRGB4056DPbF
8.0V
-40°c 25°C 175°
Fig. Typ. IGBT Output Characteristics 175°C; 80µs
Fig. Typ. Diode Forward Characteristics 80µs
6.0A
6.0A
Fig. Typical -40°20
Fig. Typical
25°C 175°
6.0A
Fig. Typical 175°
Fig. Typ. Transfer Characteristics 50V; 10µs
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IRGB4056DPbF
Swiching Time (ns)
tdOFF tdON 1000
Energy (µJ)
EOFF
Fig. Typ. Energy Loss 175°C; 200µH; 400V,
Energy (µJ)
Fig. Typ. Switching Time 175°C; 200µH; 400V,
1000
EOFF
Swiching Time (ns)
tdOFF tdON
Fig. Typ. Energy Loss 175°C; 200µH; 400V, 12A;
Fig. Typ. Switching Time 175°C; 200µH; 400V, 12A;
Fig. Typ. Diode 175°
Fig. Typ. Diode 175°
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IRGB4056DPbF
1400 1200 1000
(µC)
6.0A
1000 1500 (A/µs)
1000
1500
(A/µs)
Fig. Typ. Diode diF/dt 400V; 15V; 12A; 175°
Fig. Typ. Diode diF/dt 400V; 15V; 175°120
Energy (µJ)
Time (µs)
Current
Fig. Typ. Diode 175°10000
Fig. Short Circuit Time 400V; 25°16 300V 400V
Capacitance (pF)
1000
Cies
Coes Cres
VGE, Gate-to-Emitter Voltage
Total Gate Charge (nC)
Fig. Typ. Capacitance VGE= 1MHz
Fig. Typical Gate Charge 12A; 600µH
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IRGB4056DPbF
0.50
Thermal Response thJC
0.20 0.10 0.05
0.02 0.01
(°C/W) (sec) 0.358 0.000171 0.424 0.001361 0.287 0.009475
0.01
SINGLE PULSE THERMAL RESPONSE
i/Ri i/Ri
Notes: Duty Factor t1/t2 Peak Zthjc 0.001 0.01
0.001 1E-006
1E-005
0.0001
Rectangular Pulse Duration (sec)
Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
0.50
Thermal Response thJC
0.20 0.10 0.05
0.02 0.01
(°C/W)
0.821094
(sec) 0.000233
0.01
SINGLE PULSE THERMAL RESPONSE
i/Ri i/Ri
1.913817 0.001894 0.926641 0.014711
Notes: Duty Factor t1/t2 Peak Zthjc 0.001 0.01
0.001 1E-006
1E-005
0.0001
Rectangular Pulse Duration (sec)
Fig. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRGB4056DPbF
Fig.C.T.1 Gate Charge Circuit (turn-off)
Fig.C.T.2 RBSOA Circuit
clamp
360V
RIVER
Fig.C.T.3 S.C. Circuit
Fig.C.T.4 Switching Loss Circuit
force
400µH sense
force
0.0075µ
sense force
Fig.C.T.5 Resistive Load Circuit
Fig.C.T.6 BVCES Filter Circuit
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IRGB4056DPbF
TEST
test
test
EOFF Loss -100 -0.50 0.00 0.50 1.00 1.50
2.00
-100 11.70
11.80
11.90 Time (µs)
12.00
12.10
Time(µs)
Fig. Typ. Turn-off Loss Waveform 175°C using Fig. CT.4
Fig. Typ. Turn-on Loss Waveform 175°C using Fig. CT.4
-0.05 Peak
Peak
0.05 time (µS)
0.15
-100 -5.00
0.00
5.00
10.00
time (µS)
Fig. Typ. Diode Recovery Waveform 175°C using Fig. CT.4
Fig. Typ. S.C. Waveform 25°C using Fig. CT.3
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IRGB4056DPbF
TO-220AB Package Outline
Dimensions shown millimeters (inches)
TO-220AB Part Marking Information
@Y6HQG@) DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G`
TO-220AB package recommended Surface Mount Application. Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 02/06
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