AO3703 uses advanced trench technology provide excellent DS(ON) gate c

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AO3703 uses advanced trench technology provide excellent DS(ON) gate c

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AO3703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO3703 uses advanced trench technology provide excellent DS(ON) gate charge. Schottky diode provided facilitate implementation bidirectional blocking switch, DC-DC conversion applications. Standard Product AO3703 Pb-free (meets ROHS Sony specifications). AO3703L Green Product ordering option. AO3703 AO3703L electrically identical.
-20V -2.7 (VGS -10V) RDS(ON) (VGS -4.5V) RDS(ON) 130m (VGS -2.5V) RDS(ON) 190m (VGS -1.8V) SCHOTTKY 20V, VF<0.5V@0.5A
SOT-23-5 View
Absolute Maximum Ratings A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current TA=70°C Pulsed Drain Current Schottky reverse voltage TA=25°C Continuous Forward Current TA=70°C Pulsed Forward Current Power Dissipation Junction Storage Temperature Range Parameter: Thermal Characteristics MOSFET Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
MOSFET -2.7 -2.1
Schottky
Units
TA=25°C TA=70°C
TSTG Symbol
1.14 0.72 80.3 58.5
0.92 0.59
Units °C/W
Steady-State Steady-State
Alpha Omega Semiconductor, Ltd.
AO3703
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Conditions ID=-250µA, VGS=0V VDS=-16V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-2.7A TJ=125°C -0.3 -0.6 -0.78 ±100 Units
VGS=-2.5V, ID=-2A VGS=-1.8V, ID=-1A Forward Transconductance VDS=-5V, ID=-2.7A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) Turn-On DelayTime Turn-On Rise Time tD(off) Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge SCHOTTKY PARAMETERS Forward Voltage Drop Maximum reverse leakage current Junction Capacitance Schottky Reverse Recovery Time Schottky Reverse Recovery Charge
VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
0.39
VGS=-4.5V, VDS=-10V, ID=-2.7A
VGS=-4.5V, VDS=-10V, RL=2.8, RGEN=3 IF=-2.7A, dI/dt=100A/µs IF=-2.7A, dI/dt=100A/µs IF=0.5A VR=16V VR=16V, J=125°C VR=10V IF=1A, dI/dt=100A/µs IF=1A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with TA=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. Rev0: July 2006
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICA COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISIN SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN FUNCTIONS RELIABILITY WITHOUT NOTICE
Alpha Omega Semiconductor, Ltd.
AO3703
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-4.5V -3.0V -ID(A) -2.0V -2.5V VDS=-5V
VGS=-1.5V
125°C 25°C
-VDS (Volts) On-Region Characteristics
-VGS(Volts) Figure Transfer Characteristics
VGS=-1.8V RDS(ON) VGS=-2.5V
VGS=-2.5V Normalized On-Resistance VGS=-1.8V VGS=-4.5V
VGS=-4.5V
Figure On-Resistance Drain Current Gate Voltage
Temperature (°C) Figure On-Resistance Junction Temperature 1E+01 1E+00
ID=-2.7A RDS(ON)
1E-01 1E-02 1E-03 1E-04 1E-05
125°C 25°C
125°C 25°C
-VGS (Volts) Figure On-Resistance Gate-Source Voltage
1E-06 -VSD (Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
AO3703
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VGS (Volts) (nC) Figure Gate-Charge Characteristics VDS=-10V ID=-2.7A Capacitance (pF)
Ciss
Crss Coss
-VDS (Volts) Figure Capacitance Characteristics
100.0 TJ(Max)=150°C TA=25°C (Amps) 10.0 RDS(ON) limited -VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note 0.1s 10ms 100µs 10µs Power
TJ(Max)=150°C TA=25°C
0.001
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1000
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA
RJA=110°C/W
0.01 0.00001
0.0001
0.001
0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.

AO3703 uses advanced trench technology provide excellent DS(ON) gate c

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