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IRIS-G6353 Oscillator provided monolithic control with adopting O
Top Searches for this datasheetData Sheet 96946A IRIS-G6353 Oscillator provided monolithic control with adopting On-ChipTrimming technology. Small temperature characteristics variation adopting comparator compensate temperature control part. start-up circuit current (50uA max) Built-in Active Low-Pass Filter stabilizing operation case light load Avalanche energy guaranteed MOSFET with high VDSS built-in power MOSFET simplifies surge absorption circuit since MOSFET guarantees avalanche energy. VDSS de-rating required. Built-in constant voltage drive circuit kinds protection functions Pulse-by-pulse Overcurrent Protection (OCP) Overvoltage Protection with latch mode (OVP) Thermal Shutdown with latch mode (TSD) IRIS-G6353 1.90 MOSFET VDSS(V) INTEGRATED SWITCHER Package Outline TO-220 Fullpack Lead) Specifications Type RDS(ON) input(V) 230±15% Pout(W) Note Descriptions Note Pout represents thermal rating Operation, peak power output obtained approximately 140% above listed. When output voltage ON-duty narrow, Pout shall become lower than that above. IRIS-G6353 hybrid consists from power MOSFET controller designed fly-back converter type SMPS (Switching Mode Power Supply) applications. This realizes downsizing standardizing power supply system reducing external components count simplifying circuit designs. (Note). abbreviation "Pulse Ratio Control" (On-width control with fixed OFF-time). Typical Connection Diagram IRIS-G6300 OCP/FB www.irf.com IRIS-G6353 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage device occur. voltage parameters absolute voltages referenced terminals stated, currents defined positive into lead. thermal resistance power dissipation ratings measured under board mounted still conditions. Symbol IDpeak IDMAX Definition Drain Current Maximum switching current Terminals Max. Ratings Units Note Single Pulse V2-3=0.82V Ta=-20~+125 Single Pulse VDD=99V, L=20mH peak=3.2A Tstg Single pulse avalanche energy Input voltage control part O.C.P/F.B voltage Power dissipation MOSFET Power dissipation control part (Control Internal frame temperature operation Operating ambient temperature Storage temperature Channel temperature 0.14 +125 +125 +125 With infintite heatsink Without heatsink Specified Refer recommended operating temperature Refer A.S.O curve Tch-EAS curve Refer Ta-PD1 curve Refer TF-PD2 curve Control (See page Maximum switching current. Fig.1 V2-3 maximum switching current Drain current determined drive voltage threshold voltage (Vth) FET. Therefore, event that voltage drop occurs between patterning, maximum switching current decreases shown V2-3 Fig.1 Accordingly please this device within decrease value, referring derating curve maximum switching current. www.irf.com IRIS-G6353 Electrical Characteristics (for Control Electrical characteristics control part (Ta=25, Vin=20V,unless otherwise specified) Symbol Vin(ON) Vin(OFF) Iin(ON) Iin(OFF) TOFF(MAX) IOCP/FB Vin(OVP) Iin(H) Vin(La.OFF) Tj(TSD) Definition Operation start voltage Operation stop voltage Circuit current operation Circuit current non-operation Maximum time O.C.P/F.B threshold voltage O.C.P/F.B extraction current O.V.P operation voltage Latch circuit sustaining current Latch circuit release voltage *6,7 Thermal shutdown operating temperature 15.8 23.2 Ratings 17.6 10.1 0.76 25.5 19.4 11.1 0.82 27.8 10.5 Units µsec Test Conditions Vin=019.4V Vin=19.49.1V Vin=15V Vin=027.8V Vin=27.8(Vin(OFF)-0.3)V Vin=27.87.9V relation VIN(OFF) >VIN(La.OFF) applied each product latch circuit means circuit operated O.V.P T.S.D. Electrical Characteristics (for MOSFET) (Ta=25) unless otherwise specified Symbol VDSS IDSS Definition Drain-to-Source breakdown voltage Drain leakage current Ratings Units nsec Test Conditions ID=300µA =0V(short) =650V V3-2=0V(short) V3-2=10V ID=1.2A RDS(ON) On-resistance Switching time ch-F Thermal resistance Between channel internal frame www.irf.com IRIS-G6353 IRIS-G6353 A.S.O. temperature derating coefficient curve IRIS-G6353 MOSFET A.S.O. Curve Ta=25 Single Pulse A.S.O. temperature derating coefficient[%] Drain CurrentD Drain current limit resistance 0.1ms temperature derating shall made obtaining Coefficient from left curve your use. 0.01 1000 Drain-to-Source Voltage Internal frame temperature IRIS-G6353 Maximum Switching current derating curve +125 IRIS-G6353 Avalanche energy derating curve 12.0 Maximum Switchng Current temperature derating coefficient[%] 10.0 DMAX V2-3 Channel temperature www.irf.com IRIS-G6353 IRIS-G6353 MOSFET Ta-PD1 Curve IRIS-G6353 TF-PD2 Curve 0.16 PD2=0.14[W] PD1=26[W] 0.14 0.12 Power dissipation D1[W] With infinite heatsink Power dissipation PD2[W] 0.10 0.08 0.06 0.04 0.02 0.00 Without heatsink PD1=1.5[W] Ambient temperature Ta[] Internal frame temperature TF[] IRIS-G6353 Transient thermal resistance curve Transient thermal resistance ch-c[ 0.01 0.001 100µ [sec] 100m www.irf.com IRIS-G6353 Block Diagram UVLO Latch Internal Bias Delay Latch Drive Comp. Icont OCP/FB Lead Assignments IRIS Symbol OCP/FB Description Drain Source Ground Power supply Overcurrent Feedback Function MOSFET drain MOSFET source Ground Input power supply control circuit Input overcurrent detection signal constant voltage control signal Other Functions O.V.P. Overvoltage Protection Circuit T.S.D. Thermal Shutdown Circuit OCP/FB www.irf.com IRIS-G6353 Case Outline ±0.2 ±0.2 ±0.2 ±0.2 ±0.2 16.9 ±0.3 IRIS ±0.1 ±0.5 2-(R1) ±0.5 0.94 ±0.15 0.85 -0.1 +0.2 R-end (4.6) 0.45 -0.1 +0.2 4xp1.7±0.1=(6.8) 5.08 ±0.6 ±0.2 aType Number G6353 bLot Number letterThe last digit year letterMonth Jan. Sept., Oct. Nov. Dec. letterDay Arabic Numerals letter Registration Symbol Weight Approx. 2.3g Dimensions DWG.No.TG3A-1128 Material Treatment plating solder Data specifications subject change without notice. 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