SILICON EPITAXIAL TRANSISTORS CSD667 CSD667A TO-237 Frequenc

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SILICON EPITAXIAL TRANSISTORS CSD667 CSD667A TO-237 Frequenc

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IS/ISO 9002 IECQC 700000 Lic# QSC/L- 000019.2 IECQC 750100
SILICON EPITAXIAL TRANSISTORS
CSD667 CSD667A TO-237
Frequency Power Amplifier Complementary CSB647/A
ABSOLUTE MAXIMUM RATINGS(Ta=25 DESCRIPTION SYMBOL Collector -Base Voltage VCBO VCEO Collector -Emitter Voltage Emitter Base Voltage VEBO Collector Current Peak Collector Power Dissipation Operating Storage Junction Tstg Temperature Range CSD667 +150 CSD667A +150 UNIT
ELECTRICAL CHARACTERISTICS (Ta=25 Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION CSD667 CSD667A VCBO IC=10uA, IE=0 >120 >120 Collector -Base Voltage Collector -Emitter Voltage VCEO IC=1mA, IB=0 >100 Emitter Base Voltage VEBO IE=10uA, IC=0 >5.0 >5.0 ICBO VCB=100V, IE=0 Collector Current Current Gain hFE* IC=150mA,VCE=5V** 60-320 60-200 IC=500mA,VCE=5V** VCE(Sat) IC=500mA,IB=50mA** <1.0 <1.0 Collector Emitter Saturation Voltage Base Emitter Voltage IC=150mA,VCE=5V** <1.5 <1.5 Dynamic Characteristics IC=150mA,VCE=5V** typ140 typ140 Gain Bandwidth Product VCB=10V, f=1MHz typ12 typ12 Output Capacitance CLASSIFICATION hFE* hFE* **Pulse Test 60-120 60-120 100-200 100-200 160-320
UNIT
CSD667 CSD667A
Data Sheet
Page
TO-237 Plastic Package
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SILICON EPITAXIAL TRANSISTORS CSD667 CSD667A TO-237 Frequenc

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