Schottky Diode 1.0A Schottky Diode Chip PROCESS DETAILS Proc
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CPD76V
Schottky Diode
1.0A Schottky Diode Chip
PROCESS DETAILS Process Size Thickness Anode Bonding Area Side Metalization Back Side Metalization EPITAXIAL PLANAR MILS MILS MILS
GEOMETRY GROSS INCH WAFER 10,915 PRINCIPAL DEVICE TYPES CMLSH1-40 1N5817 1N5818 1N5819
Adams Avenue Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
-April 2005)
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