BD034 TRANSISTOR (PNP) TO-126 FEATURES Power dissipation
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TO-126 Plastic-Encapsulate Transistors
BD034
TRANSISTOR (PNP) TO-126
FEATURES Power dissipation
EMITTER
PCM:
1.25
(Tamb=25)
COLLECTOR BASE
Collector current ICM: -2.5 Collector-base voltage V(BR)CBO: -110 Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency VCE(sat)
unless
Test
otherwise
conditions
specified)
UNIT
Ic=-100µA, IE=0 Ic=-10mA, IB=0 IE=-100µA, IC=0 VCB=-100V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-100mA VCE=-2V, IC=-1.5A IC=-2A, IB=-200mA VCE=-5V, IC=-500mA VCE=-1V, IC=-250mA, f=1MHz
-110 -0.5
CLASSIFICATION Rank Range
hFE(1) 100-200 140-280 200-400 280-560
TypicalCharacteristics
BD034
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