General Purpose Transistor BASE COLLECTOR TO-92 EM
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BC556, BC557, A/B/C BC558, A/B/C
General Purpose Transistor
BASE
COLLECTOR
TO-92
EMITTER
Maximum Ratings TA=25 unless otherwise noted)
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous
Symbol
VECO VEBO
BC556
BC557
BC558
Unit mAdc
THERMAL CHARACTERISTICS
Characteristics Total Device Dissipation Alumina Substrate, BC556 BC557 BC558 BC556 BC557 BC558 Symbol Unit
Junction Storage, Temperature
Tstg
+150
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage mAdc. Collector-Base Breakdown Voltage mAdc. Emitter-Base Breakdown Voltage mAdc. lC=0)
BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558
V(BR)CEO
V(BR)CBO
V(BR)EBO
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BC556, BC557, A/B/C BC558, A/B/C
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted) (Countinued)
Characteristics Symbol Unit
CHARACTERISTICS
Collector Cutoff Current
(VCE=-60V, lB=0) (VCE=-40V, lB=0) (VCE=-25V, lB=0)
BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558
lCEO
-0.1
Collector Cutoff Current
(VCB=-70V, lE=0) (VCB=-45V, lE=0) (VCB=-25V, lE=0)
lCBO
-0.1
Emitter Cutoff Current
(VEB =-5.0 Vdc,
lEBO
-0.1
CHARACTERISTICS
current gain
(VCE=-5V, lc=-2mA)
BC556 BC557 BC558 BC556A/BC557A/BC558A BC556B/BC557B/BC558B BC557C/BC558C
-0.3
Collector-emitter saturation voltage
(lC=-100mA, lB=-5mA)
VCE(sat) VBE(sat)
Base-emitter saturation voltage
(lC=-100mA, lB=-5mA)
Transition frequency
(VCE=-5V, lC=-10mA, f=100MHz)
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C,CAPACITANCE(pF)
VCE,COLLECTOR-EMITTER VOLTAGE(V)
hFE,NORMALIZED CURRENT GAIN
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BC556, BC557, A/B/C BC558, A/B/C
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BC556, BC557, A/B/C BC558, A/B/C
TO-92 Outline Dimensions
unit:mm
TO-92
3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50
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