FEATURES Power dissipation COLLETOR PCM: (Tamb=25) EMITTER TRANSI
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SOT-89 Plastic-Encapsulate Transistors
FEATURES Power dissipation COLLETOR PCM: (Tamb=25) EMITTER
TRANSISTOR (PNP)
SOT-89
BASE
Collector current ICM: Collector-base voltage V(BR)CBO: Operating storage junction temperature range Tstg: +150 ELECTRICAL CHARACTERISTICS (Tamb=25 CLASSIFICATION hFE(1)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE=-2V, -100mA IC=-2A, -0.2A IC=-2A, -0.2A VCE= -5V, Transition frequency
C=-0.1A
unless otherwise specified)
Test
conditions
UNIT
Ic=-100µA IE=0 IB=0 -100 IC=0 VCB= IE=0 VCE=-30 IB=0 VEB=-6V, IC=0 VCE= -2V,
-0.5 -1.5
10MHz
CLASSIFICATION hFE(1)
Rank Range 60-120 100-200 160-320 200-400
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