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VDSS 200V RDSon 25°C 208A 25°C Application Welding converters Swi
Top Searches for this datasheetAPTM20HM08F VDSS 200V RDSon 25°C 208A 25°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Power FREDFETs RDSon input Miller capacitance gate charge Fast intrinsic reverse diode Avalanche energy rated Very rugged Kelvin source easy drive Very stray inductance Symmetrical design power connectors High level integration OUT1 VBUS 0/VBUS Benefits OUT2 Outstanding performance high frequency operation Direct mounting heatsink (isolated package) junction case thermal resistance profile Absolute maximum ratings Symbol VDSS RDSon Parameter Drain Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate Source Voltage Drain Source Resistance Maximum Power Dissipation Avalanche current (repetitive repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy 25°C 80°C ratings 3000 Unit APTM20HM08F- 25°C These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed. website http://www.advancedpower.com May, 2004 APTM20HM08F ratings 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain Source Resistance Gate Threshold Voltage Gate Source Leakage Current Test Conditions 375µA 0V,VDS 200V 0V,VDS 160V 25°C 125°C 1500 ±150 Unit 10V, 104A VDS, Dynamic Characteristics Symbol Ciss Coss Crss Td(on) Td(off) Eoff Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate Source Charge Gate Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions 1MHz VBus 100V 208A Inductive switching 125°C VBus 133V 208A 2.5W Inductive switching 25°C 15V, VBus 133V 208A, Inductive switching 125°C 15V, VBus 133V 208A, 14.4 1698 1858 1872 1972 Unit Source Drain diode ratings characteristics Symbol Characteristic Continuous Source current (Body diode) Diode Forward Voltage dv/dt Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions 25°C 80°C 208A -208A 133V diS/dt 200A/µs -208A 133V diS/dt 200A/µs 25°C 125°C 25°C 125°C Unit V/ns website http://www.advancedpower.com APTM20HM08F- includes diode reverse recovery. accordance with JEDEC standard JESD24-1. dv/dt numbers reflect limitations circuit rather than device itself. VDSS 150°C 208A di/dt 700A/µs May, 2004 APTM20HM08F Thermal package characteristics Symbol RthJC VISOL TSTG Torque Characteristic Junction Case Isolation Voltage, terminal case min, isol<1mA, 50/60Hz 2500 0.16 Unit °C/W Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight heatsink terminals Package outline website http://www.advancedpower.com APTM20HM08F- May, 2004 APTM20HM08F Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration 0.18 Thermal Impedance (°C/W) 0.16 0.14 0.12 0.08 0.06 0.04 0.02 0.05 0.0001 0.001 0.01 Single Pulse 0.00001 rectangular Pulse Duration (Seconds) Voltage Output Characteristics VGS=15V Drain Current Transfert Characteristics Drain Current TJ=25°C TJ=125°C TJ=-55°C ID(on)xRDS(on)MAX 250µs pulse test duty cycle 8.5V 7.5V 6.5V VDS, Drain Source Voltage RDS(on) Drain Current Drain Current Normalized VGS=10V 104A VGS, Gate Source Voltage RDS(on) Drain Source Resistance Drain Current Case Temperature VGS=10V VGS=20V Drain Current Case Temperature (°C) May, 2004 website http://www.advancedpower.com APTM20HM08F- APTM20HM08F RDS(on), Drain Source resistance (Normalized) Breakdown Voltage Temperature BVDSS, Drain Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 Junction Temperature (°C) Threshold Voltage Temperature VGS(TH), Threshold Voltage (Normalized) Drain Current Case Temperature (°C) Capacitance Drain Source Voltage 100000 Capacitance (pF) Ciss 10000 Coss resistance Temperature Junction Temperature (°C) Maximum Safe Operating Area limited RDSon VGS=10V 104A 1000 100µs Single pulse TJ=150°C 1000 VDS, Drain Source Voltage 10ms 100ms VGS, Gate Source Voltage Gate Charge Gate Source Voltage ID=208A VDS=40V TJ=25°C Gate Charge (nC) VDS=100V VDS=160V 1000 Crss VDS, Drain Source Voltage website http://www.advancedpower.com APTM20HM08F- May, 2004 APTM20HM08F Delay Times Current td(on) td(off) (ns) Drain Current VDS=133V RG=2.5 TJ=125°C L=100µH Rise Fall times Current VDS=133V RG=2.5 TJ=125°C L=100µH td(off) (ns) td(on) Drain Current Switching Energy Current Switching Energy (mJ) Drain Current Operating Frequency Drain Current VDS=133V D=50% RG=2.5 TJ=125°C VDS=133V RG=2.5 TJ=125°C L=100µH Switching Energy Gate Resistance VDS=133V ID=208A TJ=125°C L=100µH Eoff Eoff (mJ) Eoff Gate Resistance (Ohms) Source Drain Diode Forward Voltage IDR, Reverse Drain Current 1000 TJ=150°C TJ=25°C Frequency (kHz) Drain Current VSD, Source Drain Voltage May, 2004 APT's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved. website http://www.advancedpower.com APTM20HM08F- reserves right change, without notice, specifications information contained herein Other recent searchesVNS1NV04D - VNS1NV04D VNS1NV04D Datasheet HY5117404C - HY5117404C HY5117404C Datasheet HY5116404C - HY5116404C HY5116404C Datasheet HN27C256HG - HN27C256HG HN27C256HG Datasheet ADM1070 - ADM1070 ADM1070 Datasheet 2SK2754-01L - 2SK2754-01L 2SK2754-01L Datasheet 2SD2211 - 2SD2211 2SD2211 Datasheet 2SD1918 - 2SD1918 2SD1918 Datasheet 2SD1857A - 2SD1857A 2SD1857A Datasheet
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