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VDSS 200V RDSon 25°C 208A 25°C Application motor control Swi
Top Searches for this datasheetAPTM20DUM08TG VDSS 200V RDSon 25°C 208A 25°C Application motor control Switched Mode Power Supplies Power Factor Correction Features NTC1 NTC2 Power MOSFETs RDSon input Miller capacitance gate charge Avalanche energy rated Very rugged Kelvin source easy drive Very stray inductance Symmetrical design Lead frames power connections Internal thermistor temperature monitoring High level integration Benefits NTC2 NTC1 Outstanding performance high frequency operation Direct mounting heatsink (isolated package) junction case thermal resistance Solderable terminals both power signal easy mounting profile RoHS compliant ratings 3000 Unit February, 2006 APTM20DUM08TG Absolute maximum ratings Symbol VDSS RDSon Parameter Drain Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate Source Voltage Drain Source Resistance Maximum Power Dissipation Avalanche current (repetitive repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy 25°C 80°C 25°C These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed. website http://www.advancedpower.com APTM20DUM08TG ratings 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Zero Gate Voltage Drain Current Drain Source Resistance Gate Threshold Voltage Gate Source Leakage Current 0V,VDS 200V 0V,VDS 160V 25°C 125°C 10V, 104A VDS, ±150 Unit Dynamic Characteristics Symbol Ciss Coss Crss Td(on) Td(off) Eoff Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate Source Charge Gate Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions 1MHz VBus 100V 208A Inductive switching 125°C VBus 133V 208A Inductive switching 25°C 15V, VBus 133V 208A, Inductive switching 125°C 15V, VBus 133V 208A, 14.4 4.66 0.29 1698 1858 1872 1972 Unit Source Drain diode ratings characteristics Symbol dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions 25°C 80°C 208A 208A, 133V diS/dt 200A/µs 13.4 Unit V/ns February, 2006 APTM20DUM08TG dv/dt numbers reflect limitations circuit rather than device itself. 208A di/dt 700A/µs VDSS 150°C website http://www.advancedpower.com APTM20DUM08TG Thermal package characteristics Symbol RthJC VISOL TSTG Torque Characteristic Junction Case Thermal Resistance Isolation Voltage, terminal case min, isol<1mA, 50/60Hz 2500 0.16 Unit °C/W Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Heatsink Temperature sensor (see application note APT0406 www.advancedpower.com more information). Symbol Characteristic Resistance 25°C 25/85 298.15 3952 Unit Thermistor value Thermistor temperature Package outline (dimensions website http://www.advancedpower.com APTM20DUM08TG DIMENSIONS MARKED TOLERENCED February, 2006 APTM20DUM08TG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration 0.18 Thermal Impedance (°C/W) 0.16 0.14 0.12 0.08 0.06 0.04 0.02 0.05 0.0001 0.001 0.01 Single Pulse 0.00001 rectangular Pulse Duration (Seconds) Voltage Output Characteristics 1400 VGS=15V 8.5V 7.5V 6.5V Transfert Characteristics Drain Current TJ=25°C J=125°C TJ=-55°C ID(on)xRDS(on)MAX 250µs pulse test duty cycle 1200 Drain Current 1000 Drain Source Voltage RDS(on) Drain Current Drain Current Normalized GS=10V 104A VGS, Gate Source Voltage RDS(on) Drain Source Resistance Drain Current Case Temperature VGS=10V VGS=20V Drain Current Case Temperature (°C) website http://www.advancedpower.com APTM20DUM08TG February, 2006 APTM20DUM08TG RDS(on), Drain Source resistance (Normalized) Breakdown Voltage Temperature BVDSS, Drain Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 Junction Temperature (°C) Threshold Voltage Temperature VGS(TH), Threshold Voltage (Normalized) Drain Current Case Temperature (°C) Capacitance Drain Source Voltage 100000 Capacitance (pF) Ciss resistance Temperature Junction Temperature (°C) Maximum Safe Operating Area VGS=10V 104A 1000 limited RDSon 100µs Single pulse TJ=150°C 10ms 100ms 1000 VDS, Drain Source Voltage VGS, Gate Source Voltage Gate Charge Gate Source Voltage D=208A DS=40V =25°C Gate Charge (nC) February, 2006 APTM20DUM08TG VDS=100V 10000 Coss VDS=160V 1000 Crss VDS, Drain Source Voltage website http://www.advancedpower.com APTM20DUM08TG Delay Times Current d(on) td(off) (ns) Drain Current VDS=133V RG=2.5 J=125°C L=100µH Rise Fall times Current DS=133V G=2.5 J=125°C L=100µH d(off) (ns) d(on) Drain Current Switching Energy Current Switching Energy (mJ) Eoff Drain Current Operating Frequency Drain Current IDR, Reverse Drain Current Frequency (kHz) Drain Current DS=133V D=50% G=2.5 J=125°C C=75°C VDS=133V RG=2.5 TJ=125°C L=100µH Switching Energy Gate Resistance VDS=133V ID=208A TJ=125°C L=100µH Eoff Eoff (mJ) Eoff Gate Resistance (Ohms) Source Drain Diode Forward Voltage 1000 =150°C =25°C Hard switching February, 2006 APTM20DUM08TG VSD, Source Drain Voltage reserves right change, without notice, specifications information contained herein APT's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. 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