VDSS 200V RDSon 25°C 208A 25°C Application Welding converters Swi
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APTM20DHM08
VDSS 200V RDSon 25°C 208A 25°C
Application Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives
Features Power MOSFETs RDSon input Miller capacitance gate charge Avalanche energy rated Very rugged Kelvin source easy drive Very stray inductance Symmetrical design power connectors High level integration
OUT1 VBUS 0/VBUS
Benefits Outstanding performance high frequency operation Direct mounting heatsink (isolated package) junction case thermal resistance profile
OUT2
Absolute maximum ratings
Symbol VDSS RDSon Parameter Drain Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate Source Voltage Drain Source Resistance Maximum Power Dissipation Avalanche current (repetitive repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy 25°C 80°C ratings 3000 Unit
25°C
These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed.
website http://www.advancedpower.com
APTM20DHM08 May, 2004
APTM20DHM08
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain Source Resistance Gate Threshold Voltage Gate Source Leakage Current Test Conditions 375µA
0V,VDS 200V 0V,VDS 160V
25°C
125°C
±150
Unit
10V, 104A VDS,
Dynamic Characteristics
Symbol Ciss Coss Crss Td(on) Td(off) Eoff Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate Source Charge Gate Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions 1MHz VBus 100V 208A Inductive switching 125°C VBus 133V 208A 2.5W Inductive switching 25°C 15V, VBus 133V 208A, Inductive switching 125°C 15V, VBus 133V 208A, 14.4 4.66 0.30 1698 1858 1872 1972 Unit
Diode ratings characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) Diode Forward Voltage Test Conditions duty cycle 200A 400A 200A 200A 133V di/dt 400A/µs 200A 133V di/dt 400A/µs 75°C 1680 Unit
125°C 25°C 125°C 25°C 125°C
Reverse Recovery Time Reverse Recovery Charge
includes diode reverse recovery. accordance with JEDEC standard JESD24-1.
website http://www.advancedpower.com
APTM20DHM08 May, 2004
APTM20DHM08
Thermal package characteristics
Symbol Characteristic RthJC VISOL TSTG Torque Junction Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight heatsink terminals Transistor Diode 2500 0.16 0.32 Unit °C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
Package outline
website http://www.advancedpower.com
APTM20DHM08 May, 2004
APTM20DHM08
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration 0.18 Thermal Impedance (°C/W) 0.16 0.14 0.12 0.08 0.06 0.04 0.02 0.05 0.0001 0.001 0.01 Single Pulse
0.00001
rectangular Pulse Duration (Seconds) Voltage Output Characteristics
VGS=15V
Drain Current
Transfert Characteristics Drain Current
TJ=25°C TJ=125°C TJ=-55°C ID(on)xRDS(on)MAX 250µs pulse test duty cycle
8.5V 7.5V 6.5V
VDS, Drain Source Voltage RDS(on) Drain Current Drain Current
Normalized VGS=10V 104A
VGS, Gate Source Voltage
RDS(on) Drain Source Resistance
Drain Current Case Temperature
VGS=10V
VGS=20V
Drain Current
Case Temperature (°C)
APTM20DHM08 May, 2004
website http://www.advancedpower.com
APTM20DHM08
RDS(on), Drain Source resistance (Normalized) Breakdown Voltage Temperature BVDSS, Drain Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 Junction Temperature (°C) Threshold Voltage Temperature VGS(TH), Threshold Voltage (Normalized) Drain Current Case Temperature (°C) Capacitance Drain Source Voltage 100000 Capacitance (pF) Ciss 10000 Coss resistance Temperature Junction Temperature (°C) Maximum Safe Operating Area
limited RDSon
VGS=10V 104A
1000
100µs Single pulse TJ=150°C 1000 VDS, Drain Source Voltage 10ms 100ms
VGS, Gate Source Voltage
Gate Charge Gate Source Voltage ID=208A VDS=40V TJ=25°C Gate Charge (nC)
VDS=100V
VDS=160V
1000 Crss VDS, Drain Source Voltage
website http://www.advancedpower.com
APTM20DHM08 May, 2004
APTM20DHM08
Delay Times Current td(on) td(off) (ns) Drain Current
VDS=133V RG=2.5 TJ=125°C L=100µH
Rise Fall times Current
VDS=133V RG=2.5 TJ=125°C L=100µH
td(off) (ns)
td(on)
Drain Current
Switching Energy Current Switching Energy (mJ) Drain Current Operating Frequency Drain Current
VDS=133V D=50% RG=2.5 TJ=125°C VDS=133V RG=2.5 TJ=125°C L=100µH
Switching Energy Gate Resistance
VDS=133V ID=208A TJ=125°C L=100µH
Eoff
Eoff (mJ)
Eoff
Gate Resistance (Ohms) Source Drain Diode Forward Voltage IDR, Reverse Drain Current 1000 TJ=150°C TJ=25°C
Frequency (kHz) Drain Current
VSD, Source Drain Voltage
reserves right change, without notice, specifications information contained herein
APT's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
website http://www.advancedpower.com
APTM20DHM08 May, 2004
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