VBUS NTC2 VDSS 200V RDSon 25°C 208A 25°C Application Welding

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

VBUS NTC2 VDSS 200V RDSon 25°C 208A 25°C Application Welding

Datasheet Thumbnail

Top Searches for this datasheet

APTM20AM08FT
VBUS NTC2
VDSS 200V RDSon 25°C 208A 25°C
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Features Power FREDFETs RDSon input Miller capacitance gate charge Fast intrinsic reverse diode Avalanche energy rated Very rugged Kelvin source easy drive Very stray inductance Symmetrical design Lead frames power connections Internal thermistor temperature monitoring High level integration Benefits Outstanding performance high frequency operation Direct mounting heatsink (isolated package) junction case thermal resistance Solderable terminals both power signal easy mounting profile
0/VBU NTC1
VBUS
0/VBUS
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS RDSon Parameter Drain Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate Source Voltage Drain Source Resistance Maximum Power Dissipation Avalanche current (repetitive repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy 25°C 80°C ratings 3000 Unit
May, 2004 APTM20AM08FT
25°C
These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed.
website http://www.advancedpower.com
APTM20AM08FT
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain Source Resistance Gate Threshold Voltage Gate Source Leakage Current Test Conditions 375µA
0V,VDS 200V 0V,VDS 160V
25°C 125°C
1500 ±150
Unit
10V, 104A VDS,
Dynamic Characteristics
Symbol Ciss Coss Crss Td(on) Td(off) Eoff Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate Source Charge Gate Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions 1MHz VBus 100V 208A Inductive switching 125°C VBus 133V 208A 2.5W Inductive switching 25°C 15V, VBus 133V 208A, Inductive switching 125°C 15V, VBus 133V 208A, 14.4 4.66 0.29 1698 1858 1872 1972 Unit
Source Drain diode ratings characteristics
Symbol Characteristic Continuous Source current (Body diode) Diode Forward Voltage dv/dt Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions 25°C 80°C 208A 208A 133V diS/dt 200A/µs 208A 133V diS/dt 200A/µs 25°C 125°C 25°C 125°C Unit V/ns
website http://www.advancedpower.com
APTM20AM08FT
includes diode reverse recovery. accordance with JEDEC standard JESD24-1. dv/dt numbers reflect limitations circuit rather than device itself. VDSS 150°C 208A di/dt 700A/µs
May, 2004
APTM20AM08FT
Thermal package characteristics
Symbol RthJC VISOL TSTG Torque Characteristic Junction Case
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
2500
0.16
Unit °C/W
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
Heatsink
Temperature sensor
Symbol Characteristic Resistance 25°C 25/85 298.16
Thermistor temperature Thermistor value
4080
Unit
Package outline
website http://www.advancedpower.com
APTM20AM08FT
May, 2004
APTM20AM08FT
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration 0.18 Thermal Impedance (°C/W) 0.16 0.14 0.12 0.08 0.06 0.04 0.02 0.05 0.0001 0.001 0.01 Single Pulse
0.00001
rectangular Pulse Duration (Seconds) Voltage Output Characteristics
VGS=15V
Drain Current
Transfert Characteristics Drain Current
TJ=25°C TJ=125°C TJ=-55°C ID(on)xRDS(on)MAX 250µs pulse test duty cycle
8.5V 7.5V 6.5V
VDS, Drain Source Voltage RDS(on) Drain Current Drain Current
Normalized VGS=10V 104A
VGS, Gate Source Voltage
RDS(on) Drain Source Resistance
Drain Current Case Temperature
VGS=10V
VGS=20V
Drain Current
May, 2004 APTM20AM08FT
Case Temperature (°C)
website http://www.advancedpower.com
APTM20AM08FT
RDS(on), Drain Source resistance (Normalized) Breakdown Voltage Temperature BVDSS, Drain Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 Junction Temperature (°C) Threshold Voltage Temperature VGS(TH), Threshold Voltage (Normalized) Drain Current Case Temperature (°C) Capacitance Drain Source Voltage 100000 Capacitance (pF) Ciss 10000 Coss resistance Temperature Junction Temperature (°C) Maximum Safe Operating Area
limited RDSon
VGS=10V 104A
1000
100µs Single pulse TJ=150°C 1000 VDS, Drain Source Voltage 10ms 100ms
VGS, Gate Source Voltage
Gate Charge Gate Source Voltage ID=208A VDS=40V TJ=25°C Gate Charge (nC)
May, 2004
VDS=100V
VDS=160V
1000 Crss VDS, Drain Source Voltage
website http://www.advancedpower.com
APTM20AM08FT
APTM20AM08FT
Delay Times Current td(on) td(off) (ns) Drain Current
VDS=133V RG=2.5 TJ=125°C L=100µH
Rise Fall times Current
VDS=133V RG=2.5 TJ=125°C L=100µH
td(off) (ns)
td(on)
Drain Current
Switching Energy Current Switching Energy (mJ) Drain Current Operating Frequency Drain Current
VDS=133V D=50% RG=2.5 TJ=125°C VDS=133V RG=2.5 TJ=125°C L=100µH
Switching Energy Gate Resistance
VDS=133V ID=208A TJ=125°C L=100µH
Eoff
Eoff (mJ)
Eoff
Gate Resistance (Ohms) Source Drain Diode Forward Voltage IDR, Reverse Drain Current 1000 TJ=150°C TJ=25°C
Frequency (kHz) Drain Current
VSD, Source Drain Voltage
May, 2004
reserves right change, without notice, specifications information contained herein
APT's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
website http://www.advancedpower.com
APTM20AM08FT

VBUS NTC2 VDSS 200V RDSon 25°C 208A 25°C Application Welding

Top Searches for this datasheet

Other recent searches