Asymmetrical Bridge Fast Trench Field Stop IGBT® Power Module VBU

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Asymmetrical Bridge Fast Trench Field Stop IGBT® Power Module VBU

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APTGT100DH120TG
Asymmetrical Bridge Fast Trench Field Stop IGBT® Power Module
VBUS VBUS SENSE
VCES 1200V 100A 80°C
Application Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features Fast Trench Field Stop IGBT® Technology voltage drop tail current Switching frequency Soft recovery parallel diodes diode leakage current Avalanche energy rated RBSOA SCSOA rated Kelvin emitter easy drive Very stray inductance Symmetrical design Lead frames power connections High level integration Internal thermistor temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals easy mounting Direct mounting heatsink (isolated package) junction case thermal resistance Easy paralleling positive VCEsat profile RoHS Compliant ratings 1200 200A 1100V Unit
APTGT100DH120TG October, 2005
OUT1 OUT2
0/VBUS SENSE
0/VBUS
VBUS SENSE
OUT2
VBUS
0/VBUS
OUT1
0/VBUS SENSE
NTC2 NTC1
Absolute maximum ratings
Symbol VCES RBSOA
Parameter Collector Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation 25°C 80°C 25°C 25°C 125°C
Reverse Bias Safe Operating Area
These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed.
website http://www.advancedpower.com
APTGT100DH120TG
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current Test Conditions 1200V 25°C =15V 100A 125°C 20V, Unit
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Td(off) Td(on) Td(off) Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn Energy Turn Energy
Test Conditions 1MHz Inductive Switching (25°C) ±15V VBus 600V 100A Inductive Switching (125°C) ±15V VBus 600V 100A
7200
Unit
Diode ratings characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions VR=1200V 100A 100A 600V
di/dt =2000A/µs
1200 25°C 125°C 80°C 25°C 125°C 25°C 125°C 25°C 125°C
Unit
website http://www.advancedpower.com
APTGT100DH120TG October, 2005
APTGT100DH120TG
Temperature sensor (see application note APT0406 www.advancedpower.com more information).
Symbol Characteristic Resistance 25°C 25/85 298.15 3952 Unit
Thermistor value
Thermistor temperature
Thermal package characteristics
Symbol Characteristic RthJC VISOL TSTG Torque Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
0.26 0.48
Unit °C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
Heatsink
2500
Package outline (dimensions
DIMENSIONS MARKED TOLERENCED
website http://www.advancedpower.com
APTGT100DH120TG October, 2005
APTGT100DH120TG
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 125°C
TJ=125°C
TJ=25°C
=17V
VGE=13V =15V
VGE=9V
Transfert Characteristics
J=25°C TJ=125°C
(mJ)
Energy losses Collector Current
600V 125°C Eoff
=125°C
Switching Energy Losses Gate Resistance (mJ) Gate Resistance (ohms)
600V =15V 100A 125°C
Reverse Bias Safe Operating Area
Eoff
1200 1500
VGE=15V J=125°C RG=3.9
maximum Effective Transient Thermal Impedance, Junction Pulse Duration Thermal Impedance (°C/W) 0.25 0.15 0.05 0.05 0.0001 0.001 Single Pulse 0.01
IGBT
0.00001
rectangular Pulse Duration (Seconds)
website http://www.advancedpower.com
APTGT100DH120TG October, 2005
APTGT100DH120TG
Operating Frequency Collector Current Fmax, Operating Frequency (kHz)
=600V D=50% RG=3.9 =125°C Tc=75°C
Forward Characteristic diode
=25°C
Hard switching
=125°C
J=125°C =25°C
maximum Effective Transient Thermal Impedance, Junction Pulse Duration Thermal Impedance (°C/W)
Diode
0.05 0.0001 Single Pulse 0.001 0.01
0.00001
rectangular Pulse Duration (Seconds)
reserves right change, without notice, specifications information contained herein
APT's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
website http://www.advancedpower.com
APTGT100DH120TG October, 2005

Asymmetrical Bridge Fast Trench Field Stop IGBT® Power Module VBU

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