14TX0614 Chip Device Layout Integrated Mixer, Buffer Output Ampli
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10.0-18.0 GaAs MMIC Transmitter
14TX0614 Chip Device Layout
Integrated Mixer, Buffer Output Amplifier Conversion Gain Image Rejection OIP3 Drive Level Leakage Power 100% On-Wafer Testing 100% Visual Inspection MIL-STD-883 Method 2010
General Description
Mimix Broadband's 10.0-18.0 GaAs MMIC transmitter provides output third order intercept image rejection across band. This device image reject, balanced mixer followed stage output amplifier. image reject mixer reduces need unwanted sideband filtering before power amplifier. mixer inputs provided external degree hybrid required select desired sideband. This MMIC uses Mimix Broadband's 0.15 GaAs PHEMT device model technology, based upon electron beam lithography ensure high repeatability uniformity. chip surface passivation protect provide rugged part with backside holes gold metallization allow either conductive epoxy eutectic solder attach process. This device well suited Millimeter-wave Point-to-Point Radio, LMDS, SATCOM VSAT applications.
Electrical Characteristics (Ambient Temperature
Parameter
Frequency Range (RF) Upper Side Band Frequency Range (LO) Frequency Range (IF) Output Return Loss (S22) Small Signal Conversion Gain IF/RF (S21) Input Drive (PLO) Isolation LO/RF Output Third Order Intercept (OIP3) Drain Bias Voltage (Vd1,2,3) Source Bias Voltage (Vs1) Gate Bias Voltage (Vg1), Mixer Gate Bias Voltage (Vg2,3) Supply Current (Id1) (Vd1=5.0V) Supply Current (Id2) (Vd2=5.0V, Vg=-0.1V Typical) Supply Current (Id3) (Vd3=5.0V, Vg=-0.1V Typical) Supply Current (Iss) (Vss=-5.0V) Units Min. 10.0 -1.2 Typ. 18.0 +6.0 18.0 +17.0 +5.0 -5.0 -0.6 -0.1 Max. 18.0 21.0 +5.5 +0.1
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Characteristic Data Specifications subject change without notice. ©2005 Mimix Broadband, Inc. Export this item require appropriate export licensing from U.S. Government. purchasing these parts, U.S. Domestic customers accept their obligation compliant with U.S. Export Laws.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage (Vg) Input Power Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
Absolute Maximum Ratings
Channel temperature affects device's MTTF. recommended keep channel temperature possible maximum life.
+6.0 250,150,250 +0.3 +165 MTTF Table MTTF Table
10.0-18.0 GaAs MMIC Transmitter
14TX0614
Transmitter Measurements
onv. Image ejecti USB,
Conv.
onv. Image ejecti LSB,
Conv Image ject
Conv (dB) Image jection (dBc)
Conv (dB) Image jection (dBc)
Image
OIP3, OIP3, OIP3, OIP3, OIP3, OIP3, OIP3, OIP3, OIP3, OIP3,
MHz, PIFs 2005: OIP3 (dBm (GHz
MHz, PIFs 2005: OIP3 (dBm (GHz
OIP3, OIP3, OIP3, OIP3, OIP3, OIP3, OIP3, OIP3, OIP3, OIP3, (dBm)=4, RC=R1 (dBm)=4, RC=R1 (dBm)=4, RC=R1 (dBm)=4, RC=R1 (dBm)=6, RC=R1 (dBm)=6, RC=R1 (dBm)=6, RC=R1 (dBm)=6, RC=R1 (dBm)=8, RC=R1 (dBm)=8, RC=R1
OIP3 (dBm)
OIP3 (dBm)
(dBm)=4, RC=R1 (dBm)=4, RC=R1 (dBm)=4, RC=R1 (dBm)=4, RC=R1 (dBm)=6, RC=R1 (dBm)=6, RC=R1 (dBm)=6, RC=R1 (dBm)=6, RC=R1 (dBm)=8, RC=R1 (dBm)=8, RC=R1
OIP3, (dBm)=8, RC=R1 OIP3, (dBm)=8, RC=R1
OIP3, (dBm)=8, RC=R1 OIP3, (dBm)=8, RC=R1
MHz, PIFs 2005: IIP3 (dBm (GHz
MHz, PIFs 2005: IIP3 (dBm (GHz
IIP3, IIP3, IIP3, IIP3, IIP3, IIP3, IIP3, IIP3, IIP3, IIP3, (dBm)=4, 10C6 (dBm)=4, 11C5 (dBm)=4, 11C7 (dBm)=4, 12C4 (dBm)=6, 10C6 (dBm)=6, 11C5 (dBm)=6, 11C7 (dBm)=6, 12C4 (dBm)=8, 10C6 (dBm)=8, 11C5 IIP3, IIP3, IIP3, IIP3, IIP3, IIP3, IIP3, IIP3, IIP3, IIP3, (dBm)=4, 10C6 (dBm)=4, 11C5 (dBm)=4, 11C7 (dBm)=4, 12C4 (dBm)=6, 10C6 (dBm)=6, 11C5 (dBm)=6, 11C7 (dBm)=6, 12C4 (dBm)=8, 10C6 (dBm)=8, 11C5
IIP3 (dBm)
IIP3 (dBm)
IIP3, (dBm)=8, 11C7 IIP3, (dBm)=8, 12C4
IIP3, (dBm)=8, 11C7 IIP3, (dBm)=8, 12C4
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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Characteristic Data Specifications subject change without notice. ©2005 Mimix Broadband, Inc. Export this item require appropriate export licensing from U.S. Government. purchasing these parts, U.S. Domestic customers accept their obligation compliant with U.S. Export Laws.
10.0-18.0 GaAs MMIC Transmitter
14TX0614
Transmitter Measurements (cont.)
MHz, PIFs 2005:
LO/R LO/R LO/R LO/R LO/R LO/R LO/R LO/R LO/R LO/R (dBm)=4, =R10C6 (dBm)=4, =R11C5 (dBm)=4, =R11C7 (dBm)=4, =R12C4 (dBm)=6, =R10C6 (dBm)=6, =R11C5 (dBm)=6, =R11C7 (dBm)=6, =R12C4 (dBm)=8, =R10C6 (dBm)=8, =R11C5
MHz, PIFs 2005:
LO/R (dBm)=8, =R11C7 LO/R (dBm)=8, =R12C4
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page
Characteristic Data Specifications subject change without notice. ©2005 Mimix Broadband, Inc. Export this item require appropriate export licensing from U.S. Government. purchasing these parts, U.S. Domestic customers accept their obligation compliant with U.S. Export Laws.
LO/R LO/R LO/R LO/R LO/R LO/R LO/R LO/R LO/R LO/R
(dBm)=4, =R10C6 (dBm)=4, =R11C5 (dBm)=4, =R11C7 (dBm)=4, =R12C4 (dBm)=6, =R10C6 (dBm)=6, =R11C5 (dBm)=6, =R11C7 (dBm)=6, =R12C4 (dBm)=8, =R10C6 (dBm)=8, =R11C5
(dB)
(dB)
LO/R (dBm)=8, =R11C7 LO/R (dBm)=8, =R12C4
10.0-18.0 GaAs MMIC Transmitter
14TX0614
Mechanical Drawing
0.169 (0.007) 2.200 (0.087)
0.569 (0.022)
1.169 (0.046)
1.968 (0.077)
2.368 (0.093)
1.100 (0.043)
0.169 (0.007) 0.569 (0.022) 1.169 (0.046) 1.968 (0.077)
2.368 (0.093)
Units: millimeters (inches) Bond dimensions shown center bond pad. Thickness: 0.110 0.010 (0.0043 0.0004), Backside ground, Bond Pad/Backside Metallization: Gold DC/IF Bond Pads 0.100 0.100 (0.004 0.004). Bond Pads 0.100 0.200 (0.004 0.008). Bond centers approximately 0.109 (0.004) from edge chip. Dicing tolerance: 0.005 (+/- 0.0002). Approximate weight: 4.36 Bond (LO) Bond (Vg1) Bond (Vd1A) Bond (IF1) Bond (Vg2) Bond (Vg3)
Vg2,3
(Note: Engineering designator 14TX0614)
Bond (RF) Bond (Vd3)
3.200 (0.126)
Bond (Vd2) Bond (IF2)
Bias Arrangement
Vd1A
Bypass Capacitors Note
Vd2,3 Vd1B
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data Specifications subject change without notice. ©2005 Mimix Broadband, Inc. Export this item require appropriate export licensing from U.S. Government. purchasing these parts, U.S. Domestic customers accept their obligation compliant with U.S. Export Laws.
Bond (Vd1B) Bond (Vg1)
Page
1.824 (0.072)
10.0-18.0 GaAs MMIC Transmitter
14TX0614
Individual Stage Bias Each (Vd1,2,3, Vss, Vg1,2,3) needs have bypass capacitance (~100-200 close device possible. Additional bypass capacitance (~0.01 also recommended.
MTTF Tables (TBD)
These numbers were calculated based accelerated life test information thermal model analysis received from fabricating foundry.
Celsius Celsius Celsius
Celsius Celsius
Backplate Temperature
Channel Temperature
MTTF Hours
Note Bias Arrangement Parallel Stage Bias (Recommended general applications) same Individual Stage Bias drain gate bypass capacitors (~100-200 combined. Additional bypass capacitance (~0.01 also recommended combination gate drains tied together) bias pads.
FITs
Bias Conditions: Vd1=Vd2=Vd3=5.0V, Vss=-5.0V, Id1=140mA, Id2=70mA, Id3=140mA, Is1=140mA
Celsius
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data Specifications subject change without notice. ©2005 Mimix Broadband, Inc. Export this item require appropriate export licensing from U.S. Government. purchasing these parts, U.S. Domestic customers accept their obligation compliant with U.S. Export Laws.
Note Biasing shown bonding diagram, this device operated separately biasing Vd(1,2,3)=5.0V, Vss=-5.0V, Id1=140mA, Id2=70mA, Id3=140mA Is1=140mA. Additionally, mixer also required with Vg1=-0.6V. Adjusting above below this value adversely affect conversion gain, LO/RF isolation intercept point performance. Gain control adjusted varying Vg2,3 from -1.2 with 0.0V providing minimum attenuation -1.2 providing maximum attenuation. also recommended active biasing keep currents constant power temperature vary; this gives most reproducible results. Depending supply voltage available power dissipation constraints, bias circuit single transistor power operational amplifier, with value resistor series with drain supply used sense current. gate pHEMT controlled maintain correct drain current thus drain voltage. typical gate voltage needed this -0.2V. Typically gate protected with Silicon diodes limit applied voltage. Also, make sure sequence applied voltage ensure negative gate bias available before applying positive drain supply.
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10.0-18.0 GaAs MMIC Transmitter
14TX0614
Note USB/LSB Selection
alternate method Selection LSB:
mbiner
mbiner
Lower Side Band operation (LSB): With connected direct port coupled port respectively shown diagram, signal will reside input port. isolated port must loaded with ohms.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data Specifications subject change without notice. ©2005 Mimix Broadband, Inc. Export this item require appropriate export licensing from U.S. Government. purchasing these parts, U.S. Domestic customers accept their obligation compliant with U.S. Export Laws.
Upper Side Band operation (USB): With connected direct port coupled port respectively shown diagram, signal will reside isolated port. input port must loaded with ohms.
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10.0-18.0 GaAs MMIC Transmitter
14TX0614
Device Schematic
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page
Characteristic Data Specifications subject change without notice. ©2005 Mimix Broadband, Inc. Export this item require appropriate export licensing from U.S. Government. purchasing these parts, U.S. Domestic customers accept their obligation compliant with U.S. Export Laws.
10.0-18.0 GaAs MMIC Transmitter
14TX0614
Handling Assembly Information
CAUTION! Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which hazardous human body environment. safety, observe following procedures: ingest. alter form this product into gas, powder, liquid through burning, crushing, chemical processing these by-products dangerous human body inhaled, ingested, swallowed. Observe government laws company regulations when discarding this product. This product must discarded accordance with methods specified applicable hazardous waste procedures.
Wire Bonding Windows surface passivation above bond pads provided allow wire bonding die's gold bond pads. recommended wire bonding procedure uses 0.076 0.013 (0.003" 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation minimize port bond inductance. Gold 0.025 (0.001") diameter wedge ball bonds acceptable Bias connections. Aluminum wire should avoided. Thermo-compression bonding recommended though thermosonic bonding used providing ultrasonic content bond minimized. Bond force, time ultrasonics critical parameters. Bonds should made from bond pads package substrate. bonds should short possible. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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Characteristic Data Specifications subject change without notice. ©2005 Mimix Broadband, Inc. Export this item require appropriate export licensing from U.S. Government. purchasing these parts, U.S. Domestic customers accept their obligation compliant with U.S. Export Laws.
Attachment GaAs Products from Mimix Broadband 0.100 (0.004") thick have vias through backside enable grounding circuit. Microstrip substrates should brought close possible. mounting surface should clean flat. using conductive epoxy, recommended epoxies Ablestick 84-1LMI 84-1LMIT cured nitrogen atmosphere manufacturer's cure schedule. Apply epoxy sparingly avoid getting surface die. epoxy fillet should visible around total periphery. eutectic mounting preferred, then fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between attachment surface should used. bonder that utilizes heated collet provides scrubbing action ensure total wetting prevent void formation nitrogen atmosphere recommended. gold-tin eutectic (80% melting point approximately (Note: Gold Germanium should avoided). work station temperature should Exposure these extreme temperatures should kept minimum. collet should heated, pre-heated avoid excessive thermal shock. Avoidance bridges force impact critical during placement.
Gallium Arsenide (GaAs) devices susceptible electrostatic mechanical damage. supplied antistatic containers, which should opened cleanroom conditions appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups with care, sharp tweezers.
Life Support Policy Mimix Broadband's products authorized critical components life support devices systems without express written approval President General Counsel Mimix Broadband. used herein: Life support devices systems devices systems which, intended surgical implant into body, support sustain life, whose failure perform when properly used accordance with instructions provided labeling, reasonably expected result significant injury user. critical component component life support device system whose failure perform reasonably expected cause failure life support device system, affect safety effectiveness.
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