Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple

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Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple

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AP09N70R-A
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple Drive Requirement RoHS Compliant
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
650V 0.75
Description
AP09N70 series specially designed main switching devices universal 90~265VAC off-line AC/DC converter applications.Both TO-220 TO-262 type provide high blocking voltage overcome voltage surge toughest power system with best combination fast switching,ruggedized design cost-effectiveness.
TO-262(R)
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 1.25
Units
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value Unit
200705053-1/6
Data specifications subject change without notice
AP09N70R-A
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min.
Typ. 2660
Max. Units 0.75 ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150
VGS=10V, ID=4.5A VDS=VGS, ID=250uA VDS=10V, ID=4.5A VDS=650V, VGS=0V VDS=520V, VGS=0V VGS=±30V ID=9A VDS=480V VGS=10V VDD=300V ID=9A RG=10,VGS=10V RD=34 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Notes: 1.Pulse width limited safe operating area.
2.Starting Tj=25 VDD=50V L=6.8mH RG=25 IAS=9A.
Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=1.5V
Min.
Typ.
Max. Units
Pulsed Source Current Body Diode
Forward Voltage
Tj=25, IS=9A, VGS=0V
3.Pulse width <300us duty cycle <2%.
AP09N70R-A
Drain Current
Drain Current
6.0V 5.0V
=150
6.0V 5.0V 4.5V
4.5V
4.0V
4.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Normalized BVDSS
=4.5A =10V Normalized RDS(ON)
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
VGS(th)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP09N70R-A
f=1.0MHz
10000
Gate Source Voltage
=320V =400V =480V
(pF)
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Normalized Thermal Response (Rthjc)
Duty factor=0.5
10us 100us
0.05
0.02
Single Pulse
10ms 100ms
0.01
Single Pulse
Duty factor Peak Rthjc
1000 10000
0.01 0.00001 0.0001 0.001 0.01
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform

Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple

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