Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple

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Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple

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AP09N70I-A
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple Drive Requirement RoHS Compliant
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
650V 0.75
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness.
TO-220CFM isolation package universally preferred commercial-industrial through hole applications.
TO-220CFM(I)
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 0.34
Units
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value Units
200711051-1/4
Data specifications subject change without notice
AP09N70I-A
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min.
Typ. 2660
Max. Units 0.75 ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150
VGS=10V, ID=4.5A VDS=VGS, ID=250uA VDS=50V, ID=4.5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V ID=9A VDS=480V VGS=10V VDD=300V ID=9A RG=10,VGS=10V RD=34 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Notes: 1.Pulse width limited safe operating area. 2.Starting Tj=25oC VDD=50V L=6.8mH RG=25 IAS=9A. 3.Pulse width <300us duty cycle <2%. Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=1.5V
Min.
Typ.
Max. Units
Pulsed Source Current Body Diode
Forward Voltage
Tj=25, IS=9A, VGS=0V
AP09N70I-A
Drain Current
6.0V 5.0V Drain Current
=150
6.0V 5.0V 4.5V
4.5V
4.0V
4.0V =3.5V
=3.5V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Normalized BVDSS
=4.5A =10V Normalized RDS(ON)
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
VGS(th)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP09N70I-A
10000
f=1.0MHz
Gate Source Voltage
(pF)
=320V =400V =480V
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Normalized Thermal Response (Rthjc)
Duty factor=0.5
10us 100us
0.05
0.02
Single Pulse
0.01
10ms 100ms
Single Pulse
Duty factor Peak Rthjc
0.01 1000 10000 0.00001 0.0001 0.001 0.01
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform

Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple

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