SO-8 similar area footprint assignment Gate Charge Fast Switching Spee

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SO-8 similar area footprint assignment Gate Charge Fast Switching Spee

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AP0603GMA
SO-8 similar area footprint assignment Gate Charge Fast Switching Speed RoHS Compliant
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
Description
APAK-5 package preferred commercial-industrial surface mount applications suited voltage applications such DC/DC converters.
APAK-5
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 62.5
Units
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient
Value Max. Max.
Units
Data specifications subject change without notice
200401053-1/4
AP0603GMA
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min.
Typ. 0.018 11.2
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=45A VGS=4.5V, ID=30A
VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150
VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=30A VDS=24V VGS=4.5V VDS=15V ID=30A RG=3.3,VGS=10V RD=0.5 VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2700 4200
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions IS=45A, VGS=0V IS=30A, VGS=0V, dI/dt=100A/µs
Min.
Typ.
Max. Units
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited safe operating area. 2.Pulse width <300us duty cycle <2%. 3.Surface mounted board. 4.Starting Tj=25oC VDD=25V L=0.1mH RG=25
AP0603GMA
Drain Current
Drain Current
7.0V 5.0V 4.5V
7.0V 4.5V
=3.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Normalized RDS(ON)
=45A =10V
RDS(ON)
Gate-to-Source Voltage
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
=150
Normalized VGS(th)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP0603GMA
f=1.0MHz
10000
=30A Gate Source Voltage
(pF)
=15V =20V =24V
1000
Total Gate Charge (nC)
,Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.05
0.02
0.01 Single Pulse
Single Pulse
10ms 100ms
Duty factor Peak Rthjc
0.01 0.00001 0.0001 0.001 0.01
,Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Drain Current
4.5V
=150
Charge
Gate-to-Source Voltage
Transfer Characteristics
Gate Charge Waveform

SO-8 similar area footprint assignment Gate Charge Fast Switching Spee

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