Repetitive Avalanche Rated Fast Switching Speed Simple Drive Requireme
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AP03N70P-H
Repetitive Avalanche Rated Fast Switching Speed Simple Drive Requirement RoHS Compliant
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
700V 2.5A
Description
AP03N70 series specially designed main switching devices universal 90~265VAC off-line AC/DC converter applications.TO-220 type provide high blocking voltage overcome voltage surge toughest power system with best combination fast switching,ruggedized design cost-effectiveness. TO-220 package universally preferred commercial-industrial applications. device suited switch mode power supplies ,DCAC converters high current high speed switching circuits.
TO-220
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 54.3 0.44
Units
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value Units
Data specifications subject change without notice
200417062-1/4
AP03N70P-H
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min.
Typ.
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150
VGS=10V, ID=1.6A VDS=VGS, ID=250uA VDS=10V, ID=1.6A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V ID=1A VDS=480V VGS=10V VDD=300V ID=2.5A RG=10,VGS=10V RD=120 VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
Source-Drain Diode
Symbol Notes: 1.Pulse width limited safe operating area. 2.Starting Tj=25oC VDD=50V L=1mH RG=25 IAS=2.5A. 3.Pulse width <300us duty cycle <2%. Parameter Forward Voltage
Test Conditions IS=2.5A, VGS=0V IS=2.5A, VGS=0V, dI/dt=100A/µs
Min.
Typ. 2110
Max. Units
Reverse Recovery Time
Reverse Recovery Charge
AP03N70P-H
6.0V
=150
5.0V
Drain Current
Drain Current
4.5V
5.0V
4.0V
4.5V =4.0V
=3.5V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=2.5A =10V Normalized RDS(ON)
Normalized BVDSS
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
VGS(th)
0.01
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP03N70P-H
f=1.0MHz
10000
Gate Source Voltage
=480V
(pF)
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100us
10ms 100ms
Single Pulse
0.01
0.05
0.02
0.01
Single Pulse
Duty factor Peak Rthjc
0.01 1000 10000
0.00001 0.0001 0.001 0.01
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
td(on) td(off)
Charge
Switching Time Waveform
Gate Charge Waveform
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