AO4456 uses advanced trench technology with monolithically integrated

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AO4456 uses advanced trench technology with monolithically integrated

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AO4456 N-Channel Enhancement Mode Field Effect Transistor
AO4456 uses advanced trench technology with monolithically integrated Schottky diode provide excellent RDS(ON),and gate charge. This device suitable side SMPS, load switching general purpose applications. Standard Product AO4456 Pb-free (meets ROHS Sony specifications). AO4456 Green Product ordering option. AO4456 AO4456 electrically identical.
=20A (VGS 10V) RDS(ON) 4.6m (VGS 10V) RDS(ON) 5.6m (VGS 4.5V)
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25°C Power Dissipation TA=70°C Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead TA=25°C TA=70°C IDSM PDSM TSTG
Maximum
Units
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO4456
Electrical Characteristics J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Schottky Continuous Current Conditions ID=1mA, VGS=0V VDS=24V, GS=0V TJ=125°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=10V, DS=5V VGS=10V, ID=20A TJ=125°C 0.37 6430 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 17.5 VGS=10V, DS=15V, L=0.75, RGEN=3 IF=20A, dI/dt=300A/µs IF=20A, dI/dt=300A/µs 10.5 7716 0.008 Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
value measured with device still environment with =25°C. power dissipation PDSM current rating IDSM based TJ(MAX)=150°C, using junction-to-ambient thermal resistance. Repetitive rating, pulse width limited junction temperature TJ(MAX)=150°C. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. curve provides single pulse rating. Rev1: June 2006
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4456
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A) (Volts) On-Region Characteristics Normalized On-Resistance VGS=4.5V Figure On-Resistance Drain Current Gate Voltage ID=20A RDS(ON) 125°C 1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 25°C (Volts) Figure On-Resistance Gate-Source Voltage 1.0E-04 1.0E-05 (Volts) Figure Body-Diode Characteristics 125°C 25°C Temperature (°C) Figure On-Resistance Junction Temperature ID=20A VGS=10V VGS=3.5V 4.5V 25°C VGS(Volts) Figure Transfer Characteristics 125° VDS=5V
RDS(ON)
VGS=4.5V
VGS=10V
Alpha Omega Semiconductor, Ltd.
AO4456
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics 12000 10000 Capacitance (pF) VDS=15V ID=20A 8000 6000 4000 Crss 2000 (Volts) Figure Capacitance Characteristics Coss Ciss
1000.0 100.0 100µ (Amps) Power 10.0 (Volts) Figure Maximum Forward Biased Safe Operating Area (Note RDS(ON) limited 0.1s 10ms 10µs
0.0001 0.001 0.01 TJ(Max)=150°C TA=25°C
TJ(Max)=150°C TA=25°C
Pulse Width Figure10: Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W 0.001 0.01 1000
0.01 Single Pulse 0.001 0.00001
0.0001
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
AO4456
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
1.0E-01 1.0E-02 VDS=24V 1.0E-03 1.0E-04 1.0E-05 1.0E-06 Temperature (°C) Figure Diode Reverse Leakage Current Junction Temperature (nC) Figure Diode Reverse Recovery Charge Peak Current Conduction Current (nC) Is=20A 1000 (ns) 1000 Is=20A di/dt=800A/us (ns) Figure Diode Reverse Recovery Time Soft Coefficient Conduction Current VSD(V) VDS=12V Temperature (°C) Figure Diode Forward voltage Junction Temperature di/dt=800A/us IS=1A
di/dt Figure Diode Reverse Recovery Charge Peak Current di/dt
di/dt Figure Diode Reverse Recovery Time Soft Coefficient di/dt
Alpha Omega Semiconductor, Ltd.

AO4456 uses advanced trench technology with monolithically integrated

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